Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors
Zhang, X (Zhang, Xiang); Li, YD (Li, Yu-Dong); Wen, L (Wen, Lin); Zhou, D (Zhou, Dong); Feng, J (Feng, Jie); Ma, LD (Ma, Lin-Dong); Wang, TH (Wang, Tian-Hui); Cai, YL (Cai, Yu-Long); Wang, ZM (Wang, Zhi-Ming); Guo, Q (Guo, Qi)
2018
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume35Issue:7Pages:1-4
Abstract

Benefitting from the higher quantum efficiency and sensitivity compared with the front-side illumination (FSI) CMOS image sensors (CISs), backside illumination (BSI) CMOS image sensors tend to replace CCDs and FSI CISs for space applications. However, the radiation damage effects and mechanisms of BSI CISs in the radiation environment are not well understood. We provide radiation effects due to 3 MeV proton irradiations of BSI CISs dedicated to imaging by the analyses of mean dark current increase, dark current nonuniformity and full well capacity in pixel arrays and isolated photodiodes. Additionally, the present annealing certifies the radiation-induced defects, which are responsible for the parameter degradations in BSI CISs.

DOI10.1088/0256-307X/35/7/074201
Indexed BySCI
WOS IDWOS:000439269700008
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5526
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorGuo, Q (Guo, Qi)
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zhang, X ,Li, YD ,Wen, L ,et al. Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors[J]. CHINESE PHYSICS LETTERS,2018,35(7):1-4.
APA Zhang, X .,Li, YD .,Wen, L .,Zhou, D .,Feng, J .,...&Guo, Q .(2018).Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors.CHINESE PHYSICS LETTERS,35(7),1-4.
MLA Zhang, X ,et al."Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors".CHINESE PHYSICS LETTERS 35.7(2018):1-4.
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