Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells
Aierken, A (Aierken, A.);  Fang, L (Fang, L.);  Heini, M (Heini, M.);  Zhang, QM (Zhang, Q. M.);  Li, ZH (Li, Z. H.);  Zhao, XF (Zhao, X. F.);  Sailai, M (Sailai, M.);  Liu, HT (Liu, H. T.);  Guo, Q (Guo, Q.);  Gao, W (Gao, W.);  Gao, H (Gao, H.);  Sun, Q (Sun, Q.); Aierken, A
2018
发表期刊SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷号185期号:10页码:36-44
摘要

The electrical parameters and external quantum efficiency (EQE) of 3 MeV and 8 MeV proton beam irradiated upright metamorphic (UMM) GaInP/GaInAs/Ge triple-junction solar cells, grown by metal-organic chemical vapor deposition, have been investigated and compared to lattice-matched (LM) GaInP/GaInAs/Ge solar cells. High-resolution X-ray diffraction was used to study the relaxation of strain by analysing reciprocal space maps. Threading dislocation density was estimated from cathodoluminescence image. SRIM simulation results have been applied for analysing the irradiation induced displacement damage and its effects on cell performance. The results show that the electrical parameters of both UMM and LM cells degraded more by 3 MeV proton compared to 8 MeV proton irradiation. The degradation of V-oc and I-sc depends on each other in both UMM and LM cells but have different features under proton irradiation due to different cell configurations, materials, and parameters etc. EQE spectra of UMM and LM cells mainly degrades in longer wavelength region due to the reduction of minority carrier diffusion length. Top GaInP subcell in UMM cell shows better radiation resistance than LM cell due to the higher In-P composition, and middle GaInAs middle subcell in UMM structure shows weaker radiation resistance because of the relatively higher indium composition.

关键词Upright Metamorphic Solar Cell Proton Irradiation Degradation Srim
DOI10.1016/j.solmat.2018.04.035
收录类别SCI
WOS记录号WOS:000437816100006
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5519
专题中国科学院特殊环境功能材料与器件重点试验室
通讯作者Aierken, A
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Device Special Environm, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
2.Tianjin Inst Power Source, 6 Huakeqi Rd,Hitech Ind Pk, Tianjin 300384, Peoples R China
3.Univ Chinese Acad Sci, 19-A Yuquan Rd, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Aierken, A ,Aierken, A. Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2018,185(10):36-44.
APA Aierken, A ,&Aierken, A.(2018).Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,185(10),36-44.
MLA Aierken, A ,et al."Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 185.10(2018):36-44.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
Effects of proton ir(2611KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Aierken, A (Aierken, A.);Fang, L (Fang, L.);Heini, M (Heini, M.);Zhang, QM (Zhang, Q. M.);Li, ZH (Li, Z. H.);Zhao, XF (Zhao, X. F.);Sailai, M (Sailai, M.);Liu, HT (Liu, H. T.);Guo, Q (Guo, Q.);Gao, W (Gao, W.);Gao, H (Gao, H.);Sun, Q (Sun, Q.)]的文章
[Aierken, A]的文章
百度学术
百度学术中相似的文章
[Aierken, A (Aierken, A.);Fang, L (Fang, L.);Heini, M (Heini, M.);Zhang, QM (Zhang, Q. M.);Li, ZH (Li, Z. H.);Zhao, XF (Zhao, X. F.);Sailai, M (Sailai, M.);Liu, HT (Liu, H. T.);Guo, Q (Guo, Q.);Gao, W (Gao, W.);Gao, H (Gao, H.);Sun, Q (Sun, Q.)]的文章
[Aierken, A]的文章
必应学术
必应学术中相似的文章
[Aierken, A (Aierken, A.);Fang, L (Fang, L.);Heini, M (Heini, M.);Zhang, QM (Zhang, Q. M.);Li, ZH (Li, Z. H.);Zhao, XF (Zhao, X. F.);Sailai, M (Sailai, M.);Liu, HT (Liu, H. T.);Guo, Q (Guo, Q.);Gao, W (Gao, W.);Gao, H (Gao, H.);Sun, Q (Sun, Q.)]的文章
[Aierken, A]的文章
相关权益政策
暂无数据
收藏/分享
文件名: Effects of proton irradiation on upright metamorphic GaInPGaInAsGe triple junction solar cells.pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。