Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells
Aierken, A (Aierken, A.)[ 1 ]; Fang, L (Fang, L.)[ 2 ]; Heini, M (Heini, M.)[ 1 ]; Zhang, QM (Zhang, Q. M.)[ 2 ]; Li, ZH (Li, Z. H.)[ 1,3 ]; Zhao, XF (Zhao, X. F.)[ 1,3 ]; Sailai, M (Sailai, M.)[ 1 ]; Liu, HT (Liu, H. T.)[ 1 ]; Guo, Q (Guo, Q.)[ 1 ]; Gao, W (Gao, W.)[ 2 ]; Gao, H (Gao, H.)[ 2 ]; Sun, Q (Sun, Q.)[ 2 ]
2018
Source PublicationSOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN0927-0248
Volume185Issue:10Pages:36-44
Abstract

The electrical parameters and external quantum efficiency (EQE) of 3 MeV and 8 MeV proton beam irradiated upright metamorphic (UMM) GaInP/GaInAs/Ge triple-junction solar cells, grown by metal-organic chemical vapor deposition, have been investigated and compared to lattice-matched (LM) GaInP/GaInAs/Ge solar cells. High-resolution X-ray diffraction was used to study the relaxation of strain by analysing reciprocal space maps. Threading dislocation density was estimated from cathodoluminescence image. SRIM simulation results have been applied for analysing the irradiation induced displacement damage and its effects on cell performance. The results show that the electrical parameters of both UMM and LM cells degraded more by 3 MeV proton compared to 8 MeV proton irradiation. The degradation of V-oc and I-sc depends on each other in both UMM and LM cells but have different features under proton irradiation due to different cell configurations, materials, and parameters etc. EQE spectra of UMM and LM cells mainly degrades in longer wavelength region due to the reduction of minority carrier diffusion length. Top GaInP subcell in UMM cell shows better radiation resistance than LM cell due to the higher In-P composition, and middle GaInAs middle subcell in UMM structure shows weaker radiation resistance because of the relatively higher indium composition.

KeywordUpright Metamorphic Solar Cell Proton Irradiation Degradation Srim
DOI10.1016/j.solmat.2018.04.035
Indexed BySCI
WOS IDWOS:000437816100006
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5519
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorAierken, A (Aierken, A.)[ 1 ]
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Device Special Environm, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
2.Tianjin Inst Power Source, 6 Huakeqi Rd,Hitech Ind Pk, Tianjin 300384, Peoples R China
3.Univ Chinese Acad Sci, 19-A Yuquan Rd, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Aierken, A ,Fang, L ,Heini, M ,et al. Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2018,185(10):36-44.
APA Aierken, A .,Fang, L .,Heini, M .,Zhang, QM .,Li, ZH .,...&Sun, Q .(2018).Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,185(10),36-44.
MLA Aierken, A ,et al."Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 185.10(2018):36-44.
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