Total ionizing dose and synergistic effects of magnetoresistive random-access memory
Zhang, XY (Zhang, Xing-Yao); Guo, Q (Guo, Qi); Li, YD (Li, Yu-Dong); Wen, L (Wen, Lin); Zhang, XY
2018
Source PublicationNUCLEAR SCIENCE AND TECHNIQUES
ISSN1001-8042
Volume29Issue:8Pages:1-5
Abstract

A magnetoresistive random-access memory (MRAM) device was irradiated by Co-60 gamma-rays and an electron beam. The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation, from which the total ionizing dose (TID) and the synergistic damage mechanism of MRAM were analyzed. In addition, DC, AC, and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system. The radiation-sensitive parameters were obtained through analyzing the data. Because of the magnetic field applied on the MRAM while testing the synergistic effects, shallow trench isolation leakage and Frenkel-Poole emission due to synergistic effects were smaller than that of TID, and hence radiation damage of the synergistic effects was also lower.

KeywordMagnetoresistive Random-access Memory Total Ionizing Dose Synergistic Effect
DOI10.1007/s41365-018-0451-8
Indexed BySCI
WOS IDWOS:000437273100005
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5517
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorZhang, XY
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Zhang, XY ,Guo, Q ,Li, YD ,et al. Total ionizing dose and synergistic effects of magnetoresistive random-access memory[J]. NUCLEAR SCIENCE AND TECHNIQUES,2018,29(8):1-5.
APA Zhang, XY ,Guo, Q ,Li, YD ,Wen, L ,&Zhang, XY.(2018).Total ionizing dose and synergistic effects of magnetoresistive random-access memory.NUCLEAR SCIENCE AND TECHNIQUES,29(8),1-5.
MLA Zhang, XY ,et al."Total ionizing dose and synergistic effects of magnetoresistive random-access memory".NUCLEAR SCIENCE AND TECHNIQUES 29.8(2018):1-5.
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