Total ionizing dose and synergistic effects of magnetoresistive random-access memory
Zhang, XY (Zhang, Xing-Yao); Guo, Q (Guo, Qi); Li, YD (Li, Yu-Dong); Wen, L (Wen, Lin); Zhang, XY
2018
发表期刊NUCLEAR SCIENCE AND TECHNIQUES
卷号29期号:8
摘要

A magnetoresistive random-access memory (MRAM) device was irradiated by Co-60 gamma-rays and an electron beam. The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation, from which the total ionizing dose (TID) and the synergistic damage mechanism of MRAM were analyzed. In addition, DC, AC, and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system. The radiation-sensitive parameters were obtained through analyzing the data. Because of the magnetic field applied on the MRAM while testing the synergistic effects, shallow trench isolation leakage and Frenkel-Poole emission due to synergistic effects were smaller than that of TID, and hence radiation damage of the synergistic effects was also lower.

关键词Magnetoresistive Random-access Memory Total Ionizing Dose Synergistic Effect
DOI10.1007/s41365-018-0451-8
收录类别SCI
WOS记录号WOS:000437273100005
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5517
专题中国科学院特殊环境功能材料与器件重点试验室
通讯作者Zhang, XY
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
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GB/T 7714
Zhang, XY ,Guo, Q ,Li, YD ,et al. Total ionizing dose and synergistic effects of magnetoresistive random-access memory[J]. NUCLEAR SCIENCE AND TECHNIQUES,2018,29(8).
APA Zhang, XY ,Guo, Q ,Li, YD ,Wen, L ,&Zhang, XY.(2018).Total ionizing dose and synergistic effects of magnetoresistive random-access memory.NUCLEAR SCIENCE AND TECHNIQUES,29(8).
MLA Zhang, XY ,et al."Total ionizing dose and synergistic effects of magnetoresistive random-access memory".NUCLEAR SCIENCE AND TECHNIQUES 29.8(2018).
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