|Place of Conferral||北京|
|Keyword||四结键合太阳能电池 位移损伤 少子扩散长度 辐射效应|
Solar cells are one of the primary power sources in spacecrafts, especially in satellites. They are directly exposed to high-energy electrons and protons in harsh space environments. These high-energy charged particles interact with solar cell materials, displace lattice atoms in the target material and affect the current-carrying capacity of the device, and, consequently, reduce the conversion efficiency of solar cell and result in shortening on-orbit service time by reducing power supply. Four-junction wafer bonded solar cell has a tendency of replacing the current triple-junction solar cell due to its advantages in conversion efficiency, and probably become to the main power source of the next-generation space activities. However, related research works on its radiation resistance performance is still in its infancy. Therefore, it is of great significance to improve the radiation resistance of four-junction wafer bonded solar cell and establish an effective on-orbit performance evaluation method.For single junction silicon and GaAs solar cells, relatively complete researches were conducted on types of defects induced by irradiation, radiation effects on cell performance, and radiation resistance evaluation methods. However, similar research works on compound semiconductor multi-junction structures are still incomplete due to the complexities of the cell structure. There are still many problems to be solved in radiation induced defect characterization and degradation prediction of compound materials and solar cell devices.The four-junction wafer bonded solar cell structure is formed by direct bonding of a GaInP/GaAs double junction cell and an InGaAsP/InGaAs double junction cell. In this work the InGaAsP/InGaAs double junction cell and the corresponding InGaAsP and InGaAs single junction cells are selected as the research object. Following three objectives are achieved: 1) Analyze the trajectories and energy deposition of different energy and different types of particles in solar cell; 2) Discuss the effect of radiation damage on double-junction and single-junction cells irradiated by 1MeV electrons, 3MeV protons and 10MeV proton. The main cell parameters have been analyzed include short-circuit current, open-circuit voltage, dark characteristics, and quantum efficiency. The damage mechanism and degradation characteristics of solar cells under different irradiation particles are discussed. 3) Based on the experimental data, the relationship between displacement damage dose and degradation of solar cell performance has been analyzed. The correlation of solar cell with different energy proton irradiation, the results of 1 MeV electrons and 10 MeV protons were investigated, and conversion factors were obtained.In summary, in this research work, radiation damage mechanism and degradation characteristics of InGaAsP and InGaAs subcells in four-junction wafer bonded solar cell structure by high energy particles have been investigated. The correlation of radiation damage between different energy and different particle based on the equivalent displacement damage doses are analyzed. The outcome of this work is expected to provide experimental data and conclusions for studying the integrated four-junction wafer bonded solar cell structure.
|赵晓凡. 空间用四结键合太阳能电池子电池辐射效应研究[D]. 北京. 中国科学院大学,2018.|
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