Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases
Zhang, JX (Zhang, Jin-xin); Guo, Q (Guo, Qi); Guo, HX (Guo, Hong-xia); Lu, W (Lu, Wu); He, CH (He, Chao-hui); Wang, X (Wang, Xin); Li, P (Li, Pei); Wen, L (Wen, Lin)
2018
Source PublicationMICROELECTRONICS RELIABILITY
ISSN0026-2714
Volume84Issue:5Pages:105-111
Abstract

This paper evaluates enhanced low dose rate sensitivity (ELDRS) in Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) which are isolated by LOCOS process. The Co-60 gamma irradiations were performed at 80 rad (Si)/s and 0.1 rad (Si)/s respectively in order to investigate dose rate dependence of the SiGe HBT. Devices were set in forward, saturated, cutoff, and all-grounded biases during the irradiation. The degradation mechanism of different dose rate irradiations was analyzed via measurement of forward Gummel mode and inverse Gummel mode both pre- and post-irradiation. The results show that ELDRS exists at forward, saturated, and all-grounded biases irradiations. The dose rate dependences of various irradiated biases are different in the SiGe HBT. The interface-traps both in EB Spacer and LOCOS are the major irradiated damages in the SiGe HBT for the low dose rate irradiation. ELDRS is directly related to the quality, thickness, and shape of oxide layers.

KeywordEldrs Sige Hbt Gamma Irradiation Bias Conditions
DOI10.1016/j.microrel.2018.03.007
Indexed BySCI
WOS IDWOS:000431939000012
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5410
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xi An Jiao Tong Univ, Xian 710049, Shaanxi, Peoples R China
3.Xidian Univ, Xian 710126, Shaanxi, Peoples R China
Recommended Citation
GB/T 7714
Zhang, JX ,Guo, Q ,Guo, HX ,et al. Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases[J]. MICROELECTRONICS RELIABILITY,2018,84(5):105-111.
APA Zhang, JX .,Guo, Q .,Guo, HX .,Lu, W .,He, CH .,...&Wen, L .(2018).Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases.MICROELECTRONICS RELIABILITY,84(5),105-111.
MLA Zhang, JX ,et al."Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases".MICROELECTRONICS RELIABILITY 84.5(2018):105-111.
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