Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose
Zheng, QW (Zheng, Qiwen); Cui, JW (Cui, Jiangwei); Yu, XF (Yu, Xuefeng); Lu, W (Lu, Wu); He, CF (He, Chengfa); Ma, T (Ma, Teng); Zhao, JH (Zhao, Jinghao); Ren, DY (Ren, Diyuan); Guo, Q (Guo, Qi); Zheng, QW
2018
Source PublicationIEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN0018-9499
Volume65Issue:2Pages:691-697
Abstract

Read static noise margin (SNM) decrease of 65-nm 6-T cell induced by total ionizing dose (TID) was observed in this paper. The static random access memory (SRAM) cell test structure allowing precise measurement of read SNM was specifically designed and irradiated by gamma ray. Experimental results show that read SNM of 65-nm 6-T cell is sensitive to TID irradiation. The largest decrease of read SNM is 48 mV after 1000 krad(Si) irradiation, which is 36% of the value before TID irradiation. Being dependent on the measurement of radiation responses of cell transistors and simulation results, we conclude that the read SNM decrease is due to a threshold voltage shift induced by TID. Because narrow width transistors are employed in SRAM cells, threshold voltage of cell transistors will be shifted by charges trapped in shallow trench isolation, known as "Radiation-Induced Narrow Channel Effect."

KeywordStatic Noise Margin (Snm) Static Random Access Memory (Sram) Total Ionizing Dose (Tid)
DOI10.1109/TNS.2017.2786227
Indexed BySCI
WOS IDWOS:000427694700003
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5293
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorZheng, QW
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Univ Chinese Acad Sci, Dept Elect Engn & Comp Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zheng, QW ,Cui, JW ,Yu, XF ,et al. Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(2):691-697.
APA Zheng, QW .,Cui, JW .,Yu, XF .,Lu, W .,He, CF .,...&Zheng, QW.(2018).Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(2),691-697.
MLA Zheng, QW ,et al."Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.2(2018):691-697.
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