Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
Li, XL (Li, Xiao-Long); Lu, W (Lu, Wu); Wang, X (Wang, Xin); Yu, X (Yu, Xin); Guo, Q (Guo, Qi); Sun, J (Sun, Jing); Liu, MH (Liu, Mo-Han); Yao, S (Yao, Shuai); Wei, XY (Wei, Xin-Yu); He, CF (He, Cheng-Fa)
2018
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume27Issue:3Pages:1-9
Abstract

The mechanisms occurring when the switched temperature technique is applied, as an accelerated enhanced low dose rate sensitivity (ELDRS) test technique, are investigated in terms of a specially designed gate-controlled lateral PNP transistor (GLPNP) that used to extract the interface traps (Nit) and oxide trapped charges (Not). Electrical characteristics in GLPNP transistors induced by Co-60 gamma irradiation are measured in situ as a function of total dose, showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP. Based on the analysis of the variations of Nit and Not, with switching the temperature, the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation. Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup. In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP, which provides us with a new insight into the test technique for ELDRS.

KeywordIonizing Radiation Damage Enhanced Low Dose Rate Sensitivity (Eldrs) Switched Temperature Irradiation Gate-controlled Lateral Pnp Transistor (glPnp)
DOI10.1088/1674-1056/27/3/036102
Indexed BySCI
WOS IDWOS:000428442600002
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5284
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorLu, W (Lu, Wu)
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Li, XL ,Lu, W ,Wang, X ,et al. Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor[J]. CHINESE PHYSICS B,2018,27(3):1-9.
APA Li, XL .,Lu, W .,Wang, X .,Yu, X .,Guo, Q .,...&He, CF .(2018).Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor.CHINESE PHYSICS B,27(3),1-9.
MLA Li, XL ,et al."Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor".CHINESE PHYSICS B 27.3(2018):1-9.
Files in This Item:
File Name/Size DocType Version Access License
Estimation of enhanc(950KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li, XL (Li, Xiao-Long)]'s Articles
[Lu, W (Lu, Wu)]'s Articles
[Wang, X (Wang, Xin)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li, XL (Li, Xiao-Long)]'s Articles
[Lu, W (Lu, Wu)]'s Articles
[Wang, X (Wang, Xin)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li, XL (Li, Xiao-Long)]'s Articles
[Lu, W (Lu, Wu)]'s Articles
[Wang, X (Wang, Xin)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.