Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
Li, XL (Li, Xiao-Long); Lu, W (Lu, Wu); Wang, X (Wang, Xin); Yu, X (Yu, Xin); Guo, Q (Guo, Qi); Sun, J (Sun, Jing); Liu, MH (Liu, Mo-Han); Yao, S (Yao, Shuai); Wei, XY (Wei, Xin-Yu); He, CF (He, Cheng-Fa); Lu, W
2018
发表期刊CHINESE PHYSICS B
卷号27期号:3
摘要

The mechanisms occurring when the switched temperature technique is applied, as an accelerated enhanced low dose rate sensitivity (ELDRS) test technique, are investigated in terms of a specially designed gate-controlled lateral PNP transistor (GLPNP) that used to extract the interface traps (Nit) and oxide trapped charges (Not). Electrical characteristics in GLPNP transistors induced by Co-60 gamma irradiation are measured in situ as a function of total dose, showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP. Based on the analysis of the variations of Nit and Not, with switching the temperature, the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation. Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup. In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP, which provides us with a new insight into the test technique for ELDRS.

关键词Ionizing Radiation Damage Enhanced Low Dose Rate Sensitivity (Eldrs) Switched Temperature Irradiation Gate-controlled Lateral Pnp Transistor (glPnp)
DOI10.1088/1674-1056/27/3/036102
收录类别SCI
WOS记录号WOS:000428442600002
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5284
专题中国科学院特殊环境功能材料与器件重点试验室
通讯作者Lu, W
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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GB/T 7714
Li, XL ,Lu, W ,Wang, X ,et al. Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor[J]. CHINESE PHYSICS B,2018,27(3).
APA Li, XL .,Lu, W .,Wang, X .,Yu, X .,Guo, Q .,...&Lu, W.(2018).Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor.CHINESE PHYSICS B,27(3).
MLA Li, XL ,et al."Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor".CHINESE PHYSICS B 27.3(2018).
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