Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop
Chen, ZJ (Chen, Zhuojun); Ding, D (Ding, Ding); Dong, YM (Dong, Yemin); Shan, Y (Shan, Yi); Zhou, SX (Zhou, Shuxing); Hu, YY (Hu, Yuanyuan); Zheng, YL (Zheng, Yunlong); Peng, C (Peng, Chao); Chen, RM (Chen, Rongmei)
2018
Source PublicationIEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume65Issue:4Pages:997-1004
Abstract

The sensitivity of total-ionizing-dose (TID) response on a single-event hardened phase-locked loop (PLL) fabricated in a 130-nm silicon-on-insulator process is investigated. Based on the study of device parameter degradation under radiation exposure, the changes of dc and RF performance of the PLL have been presented. TID experiments on the PLL show that the power-down current increases by 1.5 times, and the tuning range drops by 11.5%. At 600 MHz and up to 500 krad(Si), the integrated phase noise increases by 29.2%, and the reference spur increases by 3.4 dB. Finally, the mechanism underlying impact of TID on the phase noise and reference spur has been discussed comprehensively, which combined measured observations with circuit modeling and simulations.

KeywordPhase-locked Loop (Pll) Phase Noise Reference Spur Total Ionizing Dose (Tid)
DOI10.1109/TNS.2018.2812806
Indexed BySCI
WOS IDWOS:000429967200004
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5270
Collection中国科学院特殊环境功能材料与器件重点试验室
Affiliation1.Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
4.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
5.China Elect Product Reliabil & Environm Testing R, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China
6.Tsinghua Univ, Key Lab Particle & Radiat Imaging, Minist Educ, Dept Engn Phys, Beijing 100084, Peoples R China
Recommended Citation
GB/T 7714
Chen, ZJ ,Ding, D ,Dong, YM ,et al. Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(4):997-1004.
APA Chen, ZJ .,Ding, D .,Dong, YM .,Shan, Y .,Zhou, SX .,...&Chen, RM .(2018).Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(4),997-1004.
MLA Chen, ZJ ,et al."Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.4(2018):997-1004.
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