Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop
Chen, ZJ (Chen, Zhuojun); Ding, D (Ding, Ding); Dong, YM (Dong, Yemin); Shan, Y (Shan, Yi); Zhou, SX (Zhou, Shuxing); Hu, YY (Hu, Yuanyuan); Zheng, YL (Zheng, Yunlong); Peng, C (Peng, Chao); Chen, RM (Chen, Rongmei)
2018
发表期刊IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷号65期号:4页码:997-1004
摘要

The sensitivity of total-ionizing-dose (TID) response on a single-event hardened phase-locked loop (PLL) fabricated in a 130-nm silicon-on-insulator process is investigated. Based on the study of device parameter degradation under radiation exposure, the changes of dc and RF performance of the PLL have been presented. TID experiments on the PLL show that the power-down current increases by 1.5 times, and the tuning range drops by 11.5%. At 600 MHz and up to 500 krad(Si), the integrated phase noise increases by 29.2%, and the reference spur increases by 3.4 dB. Finally, the mechanism underlying impact of TID on the phase noise and reference spur has been discussed comprehensively, which combined measured observations with circuit modeling and simulations.

关键词Phase-locked Loop (Pll) Phase Noise Reference Spur Total Ionizing Dose (Tid)
DOI10.1109/TNS.2018.2812806
收录类别SCI
WOS记录号WOS:000429967200004
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5270
专题中国科学院特殊环境功能材料与器件重点试验室
作者单位1.Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
4.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
5.China Elect Product Reliabil & Environm Testing R, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China
6.Tsinghua Univ, Key Lab Particle & Radiat Imaging, Minist Educ, Dept Engn Phys, Beijing 100084, Peoples R China
推荐引用方式
GB/T 7714
Chen, ZJ ,Ding, D ,Dong, YM ,et al. Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(4):997-1004.
APA Chen, ZJ .,Ding, D .,Dong, YM .,Shan, Y .,Zhou, SX .,...&Chen, RM .(2018).Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(4),997-1004.
MLA Chen, ZJ ,et al."Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.4(2018):997-1004.
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