Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs
Zheng, QW (Zheng, Qi-Wen); Cui, JW (Cui, Jiang-Wei); Wei, Y (Wei, Ying); Yu, XF (Yu, Xue-Feng); Lu, W (Lu, Wu); Ren, DY (Ren, Diyuan); Guo, Q (Guo, Qi)
2018
发表期刊CHINESE PHYSICS LETTERS
ISSN0256-307X
卷号35期号:4页码:1-4
摘要

The bias dependence of radiation-induced narrow-width channel effects (RINCEs) in 65-nm n-type metal-oxidesemiconductor field-effect transistors (NMOSFETs) is investigated. The threshold voltage of the narrow-width 65nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65nm technology.

DOI10.1088/0256-307X/35/4/046102
收录类别SCI
WOS记录号WOS:000430567000019
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5269
专题中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
通讯作者Cui, JW (Cui, Jiang-Wei)
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
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Zheng, QW ,Cui, JW ,Wei, Y ,et al. Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs[J]. CHINESE PHYSICS LETTERS,2018,35(4):1-4.
APA Zheng, QW .,Cui, JW .,Wei, Y .,Yu, XF .,Lu, W .,...&Guo, Q .(2018).Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs.CHINESE PHYSICS LETTERS,35(4),1-4.
MLA Zheng, QW ,et al."Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs".CHINESE PHYSICS LETTERS 35.4(2018):1-4.
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