GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect
Rozahun, I (Rozahun, Ilmira); Bahti, T (Bahti, Tohtiaji); He, GJ (He, Guijie); Ghupur, Y (Ghupur, Yasenjan); Ablat, A (Ablat, Abduleziz); Mamat, M (Mamat, Mamatrishat)
2018
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume441Issue:5Pages:401-407
Abstract

Monolayer materials are considered as a promising candidate for novel applications due to their attractive magnetic, electronic and optical properties. Investigation on nonlinear optical (NLO) properties and effect of vacancy on monolayer materials are vital to property modulations of monolayers and extending their applications. In this work, with the aid of first-principles calculations, the crystal structure, electronic, magnetic, and optical properties of GaAs monolayers with the vacancy were investigated. The result shows gallium arsenic (GaAs) monolayer produces a strong second harmonic generation (SHG) response. Meanwhile, the vacancy strongly affects structural, electronic, magnetic and optical properties of GaAs monolayers. Furthermore, arsenic vacancy (VAS) brings semi metallic to metallic transition, while gallium vacancy (VGa) causes nonmagnetic to magnetic conversion. Our result reveals that GaAs mono layer possesses application potentials in Nano-amplifying modulator and Nano-optoelectronic devices, and may provide useful guidance in designing new generation of Nano-electronic devices. (C) 2018 Elsevier B.V. All rights reserved.

KeywordFirst-principles Calculation Gaas Monolayer Shg Response Vacancy
DOI10.1016/j.apsusc.2018.02.045
Indexed BySCI
WOS IDWOS:000427816400049
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5267
Collection中国科学院特殊环境功能材料与器件重点试验室
Affiliation1.Xinjiang Univ, Sch Phys & Technol, 666 Victory Rd, Urumqi 830046, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Rozahun, I ,Bahti, T ,He, GJ ,et al. GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect[J]. APPLIED SURFACE SCIENCE,2018,441(5):401-407.
APA Rozahun, I ,Bahti, T ,He, GJ ,Ghupur, Y ,Ablat, A ,&Mamat, M .(2018).GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect.APPLIED SURFACE SCIENCE,441(5),401-407.
MLA Rozahun, I ,et al."GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect".APPLIED SURFACE SCIENCE 441.5(2018):401-407.
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