GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect
Rozahun, I (Rozahun, Ilmira); Bahti, T (Bahti, Tohtiaji); He, GJ (He, Guijie); Ghupur, Y (Ghupur, Yasenjan); Ablat, A (Ablat, Abduleziz); Mamat, M (Mamat, Mamatrishat)
2018
发表期刊APPLIED SURFACE SCIENCE
ISSN0169-4332
卷号441期号:5页码:401-407
摘要

Monolayer materials are considered as a promising candidate for novel applications due to their attractive magnetic, electronic and optical properties. Investigation on nonlinear optical (NLO) properties and effect of vacancy on monolayer materials are vital to property modulations of monolayers and extending their applications. In this work, with the aid of first-principles calculations, the crystal structure, electronic, magnetic, and optical properties of GaAs monolayers with the vacancy were investigated. The result shows gallium arsenic (GaAs) monolayer produces a strong second harmonic generation (SHG) response. Meanwhile, the vacancy strongly affects structural, electronic, magnetic and optical properties of GaAs monolayers. Furthermore, arsenic vacancy (VAS) brings semi metallic to metallic transition, while gallium vacancy (VGa) causes nonmagnetic to magnetic conversion. Our result reveals that GaAs mono layer possesses application potentials in Nano-amplifying modulator and Nano-optoelectronic devices, and may provide useful guidance in designing new generation of Nano-electronic devices. (C) 2018 Elsevier B.V. All rights reserved.

关键词First-principles Calculation Gaas Monolayer Shg Response Vacancy
DOI10.1016/j.apsusc.2018.02.045
收录类别SCI
WOS记录号WOS:000427816400049
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5267
专题中国科学院特殊环境功能材料与器件重点试验室
作者单位1.Xinjiang Univ, Sch Phys & Technol, 666 Victory Rd, Urumqi 830046, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
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Rozahun, I ,Bahti, T ,He, GJ ,et al. GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect[J]. APPLIED SURFACE SCIENCE,2018,441(5):401-407.
APA Rozahun, I ,Bahti, T ,He, GJ ,Ghupur, Y ,Ablat, A ,&Mamat, M .(2018).GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect.APPLIED SURFACE SCIENCE,441(5),401-407.
MLA Rozahun, I ,et al."GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect".APPLIED SURFACE SCIENCE 441.5(2018):401-407.
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