Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
Ma, T (Ma, Teng); Yu, XF (Yu, Xuefeng); Cui, JW (Cui, Jiangwei); Zheng, QW (Zheng, Qiwen); Zhou, H (Zhou, Hang); Su, DD (Su, Dandan); Guo, Q (Guo, Qi)
2018
Source PublicationMICROELECTRONICS RELIABILITY
ISSN0026-2714
Volume81Issue:2Pages:112-116
Abstract

We have investigated the effects of proton irradiation on the subsequent time-dependent dielectric breakdown (TDDB) lifetimes of partially depleted (PD) SOI devices. Our results show that the TDDB lifetimes of the devices increased after proton irradiation and the amplitude increased with the intensification of the total ionizing dose (TID) damage. Moreover, the radiation-induced leakage currents (RILC) and the TDDB lifetimes of the irradiated devices by protons were dependent on TID damage but independent of energy of protons. We interpreted these results and mechanisms in terms of the effects of radiation-induced traps on the stressing current during the reliability testing, which may be significant to further expand the understanding of the radiation effects of the devices used in the space radiation environment.

KeywordReliability Proton Irradiation Radiation Induced Leakage Current (Rilc) Time-dependent Dielectric Breakdown (Tddb) Total Ionizing Does (Tid)
DOI10.1016/j.microrel.2017.12.016
Indexed BySCI
WOS IDWOS:000425576300011
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5242
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Ma, T ,Yu, XF ,Cui, JW ,et al. Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices[J]. MICROELECTRONICS RELIABILITY,2018,81(2):112-116.
APA Ma, T .,Yu, XF .,Cui, JW .,Zheng, QW .,Zhou, H .,...&Guo, Q .(2018).Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices.MICROELECTRONICS RELIABILITY,81(2),112-116.
MLA Ma, T ,et al."Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices".MICROELECTRONICS RELIABILITY 81.2(2018):112-116.
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