Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor
Wang, X (Wang Xin); Lu, W (Lu Wu); Wu, X (Wu Xue); Ma, WY (Ma Wu-Ying); Cui, JW (Cui Jiang-Wei); Liu, MH (Liu Mo-Han); Jiang, K (Jiang Ke)
2014
Source PublicationACTA PHYSICA SINICA
Volume63Issue:22
KeywordTotal Dose Radiation Nmosfet Parasitic Transistor Bandgap Voltage Reference
DOI10.7498/aps.63.226101
Indexed BySCI
WOS IDWOS:000346853600035
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5196
Collection中国科学院特殊环境功能材料与器件重点试验室
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Wang, X ,Lu, W ,Wu, X ,et al. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor[J]. ACTA PHYSICA SINICA,2014,63(22).
APA Wang, X .,Lu, W .,Wu, X .,Ma, WY .,Cui, JW .,...&Jiang, K .(2014).Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor.ACTA PHYSICA SINICA,63(22).
MLA Wang, X ,et al."Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor".ACTA PHYSICA SINICA 63.22(2014).
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