Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
Zhang, JX (Zhang Jin-Xin); He, CH (He Chao-Hui); Guo, HX (Guo Hong-Xia); Tang, D (Tang Du); Xiong, C (Xiong Cen); Li, P (Li Pei); Wang, X (Wang Xin)
2014
发表期刊ACTA PHYSICA SINICA
卷号63期号:24
摘要

In this paper we establish a three-dimensional (3D) numerical simulation model of domestic SiGe heterojunction bipolar transistor (SiGe HBT) by using technology computer aided design tools, to study the bias effect on single event effect (SEE) of SiGe HBT. The response relationship between SEE and the bias of SiGe HBT is identified based on the analyses of transient current peak and charge collection of each terminal. The results show that the worst biases for SEE are different for different terminals. Even for the same terminal, the worst biases for charge collection and transient current peak are different. This phenomenon is caused mainly by the influence of applied electric field and the change of carrier transport mode.

关键词Sige Heterojunction Bipolar Transistor Different Bias Single Event Effect 3d Numerical Simulation
DOI10.7498/aps.63.248503
收录类别SCI
WOS记录号WOS:000347610900056
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5192
专题中国科学院特殊环境功能材料与器件重点试验室
作者单位1.Xi An Jiao Tong Univ, Xian 710049, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
3.Northwest Inst Nucl Technol, Xian 710024, Peoples R China
推荐引用方式
GB/T 7714
Zhang, JX ,He, CH ,Guo, HX ,et al. Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor[J]. ACTA PHYSICA SINICA,2014,63(24).
APA Zhang, JX .,He, CH .,Guo, HX .,Tang, D .,Xiong, C .,...&Wang, X .(2014).Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor.ACTA PHYSICA SINICA,63(24).
MLA Zhang, JX ,et al."Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor".ACTA PHYSICA SINICA 63.24(2014).
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