Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
Zhang, JX (Zhang Jin-Xin); He, CH (He Chao-Hui); Guo, HX (Guo Hong-Xia); Tang, D (Tang Du); Xiong, C (Xiong Cen); Li, P (Li Pei); Wang, X (Wang Xin)
2014
Source PublicationACTA PHYSICA SINICA
Volume63Issue:24
Abstract

In this paper we establish a three-dimensional (3D) numerical simulation model of domestic SiGe heterojunction bipolar transistor (SiGe HBT) by using technology computer aided design tools, to study the bias effect on single event effect (SEE) of SiGe HBT. The response relationship between SEE and the bias of SiGe HBT is identified based on the analyses of transient current peak and charge collection of each terminal. The results show that the worst biases for SEE are different for different terminals. Even for the same terminal, the worst biases for charge collection and transient current peak are different. This phenomenon is caused mainly by the influence of applied electric field and the change of carrier transport mode.

KeywordSige Heterojunction Bipolar Transistor Different Bias Single Event Effect 3d Numerical Simulation
DOI10.7498/aps.63.248503
Indexed BySCI
WOS IDWOS:000347610900056
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5192
Collection中国科学院特殊环境功能材料与器件重点试验室
Affiliation1.Xi An Jiao Tong Univ, Xian 710049, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
3.Northwest Inst Nucl Technol, Xian 710024, Peoples R China
Recommended Citation
GB/T 7714
Zhang, JX ,He, CH ,Guo, HX ,et al. Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor[J]. ACTA PHYSICA SINICA,2014,63(24).
APA Zhang, JX .,He, CH .,Guo, HX .,Tang, D .,Xiong, C .,...&Wang, X .(2014).Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor.ACTA PHYSICA SINICA,63(24).
MLA Zhang, JX ,et al."Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor".ACTA PHYSICA SINICA 63.24(2014).
Files in This Item:
File Name/Size DocType Version Access License
Three-dimensional si(903KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhang, JX (Zhang Jin-Xin)]'s Articles
[He, CH (He Chao-Hui)]'s Articles
[Guo, HX (Guo Hong-Xia)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhang, JX (Zhang Jin-Xin)]'s Articles
[He, CH (He Chao-Hui)]'s Articles
[Guo, HX (Guo Hong-Xia)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhang, JX (Zhang Jin-Xin)]'s Articles
[He, CH (He Chao-Hui)]'s Articles
[Guo, HX (Guo Hong-Xia)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.