Preparation and thermal-sensitive characteristic of copper doped n-type silicon material
Fan Yanwei; Zhou Bukang; Wang Junhua; Chen Zhaoyang; Chang Aimin
2015
Source PublicationJournal of Semiconductors
Volume36Issue:1Pages:013004 (4 pp.)
Abstract

Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2 Omega.cm is obtained when the sample is treated at 1200 degC for 2 h with the surface concentration of the copper dopant source being 1.83 times 10-7 mol/cm2. The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values are about 3010-4130 K.

DOI10.1088/1674-4926/36/1/013004
Indexed ByCSCD
CSCD IDCSCD:5356118
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5190
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
AffiliationXinjiang Key Lab. of Electron. Inf. Mater. & Devices, Xinjiang Tech. Inst. of Phys. & Chem., Urumqi, China.
Recommended Citation
GB/T 7714
Fan Yanwei,Zhou Bukang,Wang Junhua,et al. Preparation and thermal-sensitive characteristic of copper doped n-type silicon material[J]. Journal of Semiconductors,2015,36(1):013004 (4 pp.).
APA Fan Yanwei,Zhou Bukang,Wang Junhua,Chen Zhaoyang,&Chang Aimin.(2015).Preparation and thermal-sensitive characteristic of copper doped n-type silicon material.Journal of Semiconductors,36(1),013004 (4 pp.).
MLA Fan Yanwei,et al."Preparation and thermal-sensitive characteristic of copper doped n-type silicon material".Journal of Semiconductors 36.1(2015):013004 (4 pp.).
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