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gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device
Hu, SG (Hu, Shaogang); Liu, Y (Liu, Yang); Chen, TP (Chen, Tupei); Guo, Q (Guo, Qi); Li, YD (Li, Yu-Dong); Zhang, XY (Zhang, Xing-Yao); Deng, LJ (Deng, L. J.); Yu, Q (Yu, Qi); Yin, Y (Yin, You); Hosaka, S (Hosaka, Sumio)
2018
Source PublicationIEEE TRANSACTIONS ON NANOTECHNOLOGY
ISSN1536-125X
Volume17Issue:1Pages:61-64
Abstract

In this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after gamma-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistance states and set/reset voltages induced by gamma-ray radiation can hardly influence the proper function of the device. The gamma-ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure. The radiation effects on the resistive switching memory device show little dependence on the cell area. The results suggest that the HfO2-based resistive switching memory device has good gamma-ray radiation-resistant capability.

KeywordGamma-ray Hafnium Oxide Radiation Resistive Switching Total Ionizing Dose
DOI10.1109/TNANO.2017.2661818
Indexed BySCI
WOS IDWOS:000422695200010
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5177
Collection材料物理与化学研究室
Affiliation1.Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
2.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
4.Gunma Univ, Grad Sch Engn, Gunma 3768515, Japan
Recommended Citation
GB/T 7714
Hu, SG ,Liu, Y ,Chen, TP ,et al. gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY,2018,17(1):61-64.
APA Hu, SG .,Liu, Y .,Chen, TP .,Guo, Q .,Li, YD .,...&Hosaka, S .(2018).gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device.IEEE TRANSACTIONS ON NANOTECHNOLOGY,17(1),61-64.
MLA Hu, SG ,et al."gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device".IEEE TRANSACTIONS ON NANOTECHNOLOGY 17.1(2018):61-64.
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