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Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors
Liu, Y (Liu Yuan); Chen, HB (Chen Hai-Bo); He, YJ (He Yu-Juan); Wang, X (Wang Xin); Yue, L (Yue Long); En, YF (En Yun-Fei); Liu, MH (Liu Mo-Han)
2015
发表期刊ACTA PHYSICA SINICA
卷号64期号:7
摘要

The transfer characteristics and low-frequency noise behavior of partially depleted silicon on insulator n-channel metal-oxide-semiconductor transistors after gamma-ray irradiation up to a total dose of 1M rad (Si) have been investigated in this paper. Due to the radiation-induced positive buried-oxide trapped charges and the interface traps, the back gate threshold voltage decreases from 44.72 to 12.88 V, and the electron field effect on mobility decreases from 473.7 to 419.8 cm(2)/V.s; while the sub-threshold swing increases from 2.47 to 3.93 V/dec. Based on the measurements of sub-threshold swing and the back gate threshold voltage, the variations of extracted radiation-induced buried oxide trapped charge and interface trap densities, are about 2.36 x 10(12) cm(-2) and 5.33 x 10(11) cm(-2) respectively. In addition, the normalized back gate flat-band voltage noise power spectral density is a sensitive function of radiation-induced buried oxide trapped charges and interface traps, which increases from 7 x 10(-10) V-2.Hz(-1) to 1.8 x 10(-9) V-2.Hz(-1). According to the carrier number fluctuation model, the extracted trap density near the interface between channel and buried oxide increases from 1.42 x 10(17) to 3.66 x 10(17) cm(-3).eV(-1). By considering the tunneling attenuation coefficient of the electron wave function and the tunneling depth of the electron in the buried oxide, the spatial distribution of trapped charges in the buried oxide before and after radiation are calculated and discussed.

关键词SilicOn On Insulator Partially Depleted Ionizing Radiation Low Frequency Noise
DOI10.7498/aps.64.078501
收录类别SCI
WOS记录号WOS:000354058800051
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5164
专题材料物理与化学研究室
作者单位1.CEPREI, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China
2.China Elect Technology Grp Corp, Res Inst 58, Wuxi 214035, Peoples R China
3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
推荐引用方式
GB/T 7714
Liu, Y ,Chen, HB ,He, YJ ,et al. Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors[J]. ACTA PHYSICA SINICA,2015,64(7).
APA Liu, Y .,Chen, HB .,He, YJ .,Wang, X .,Yue, L .,...&Liu, MH .(2015).Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors.ACTA PHYSICA SINICA,64(7).
MLA Liu, Y ,et al."Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors".ACTA PHYSICA SINICA 64.7(2015).
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