Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment
Zhou, H (Zhou Hang); Cui, JW (Cui Jiang-Wei); Zheng, QW (Zheng Qi-Wen); Guo, Q (Guo Qi); Ren, DY (Ren Di-Yuan); Yu, XF (Yu Xue-Feng); Yu, XF
2015
Source PublicationACTA PHYSICA SINICA
Volume64Issue:8
Abstract

With the development of semiconductor technology, the small size silicon-on-insulator metal-oxide-semiconductor field-effect transistor devices start to be applied to the aerospace field, which makes the device in use face dual challenges of the deep space radiation environment and conventional reliability. The small size device reliability test under ionizing radiation environment is conducible to the assessing of the comprehensive reliability of the device. With reference to the national standard GB2689.1-81 constant stress life test and accelerated life test method for the general electric stress, the conventional reliability of the sub-micron type partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor is studied under the ionizing radiation environment. The experiment is divided into three groups marked by A, B and C. For all the experimental devices, the gate oxide t(ox) = 12.5 nm, channel length L = 0.8 mu m and width W = 8 mu m, and nominal operating voltage V = 3.5 V. We carry out the electrical stress test on A group after irradiation with gamma-ray dose up to 1 x 10(4) Gy (Si) under the bias condition. Before group B is tested, it has been irradiated by the same dose gamma-ray and annealed for one week. Group C is not irradiated by gamma-ray before the electric stress test. After irradiation we measure the DC characteristics of the devices: the drain current versus gate voltage (I-DS-V-GS) and the drain current versus drain voltage (I-DS-V-DS). The hot carrier injection (HCI) experiment is periodically interrupted to measure the DC characteristics of the device. The sensitive parameters of HCI and irradiation are V-T, GM and IDlin, and after HCI stress, all parameters are degenerated. Through the contrast test, we qualitatively analyze the influences of the oxide trap charge and interface state on the sensitive parameters. We obtain the curve of the oxide trap charge and interface state versus time, and the influences of the different stages on device parameters. The results show that the combination of the total dose radiation environment and electrical stress causes the sensitive parameters of the device to rapidly degrade, this combination of these two factors gives rise to bigger effect than a single influence factor.

KeywordReliability Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor Total Ionizing Dose Effect Electrical Stress
DOI10.7498/aps.64.086101
Indexed BySCI
WOS IDWOS:000354059200033
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5162
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Corresponding AuthorYu, XF
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zhou, H ,Cui, JW ,Zheng, QW ,et al. Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment[J]. ACTA PHYSICA SINICA,2015,64(8).
APA Zhou, H .,Cui, JW .,Zheng, QW .,Guo, Q .,Ren, DY .,...&Yu, XF.(2015).Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment.ACTA PHYSICA SINICA,64(8).
MLA Zhou, H ,et al."Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment".ACTA PHYSICA SINICA 64.8(2015).
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