Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors
Li, P (Li Pei); Guo, HX (Guo Hong-Xia); Guo, Q (Guo Qi); Zhang, JX (Zhang Jin-Xin); Wei, Y (Wei Ying)
2015
发表期刊CHINESE PHYSICS LETTERS
卷号32期号:8
摘要

We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon (LOCOS) and deep trench isolation (DTI). The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the collector-substrate (C/S) junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.

DOI10.1088/0256-307X/32/8/088505
收录类别SCI
WOS记录号WOS:000359265600050
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5149
专题中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Key Lab Funct Mat & Devices Special Environm CAS, Urumqi 830011, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Northwest Inst Nucl Technol, Xian 710024, Peoples R China
4.Xi An Jiao Tong Univ, Sch Nucl Sci & Tecnol, Xian 710049, Peoples R China
推荐引用方式
GB/T 7714
Li, P ,Guo, HX ,Guo, Q ,et al. Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors[J]. CHINESE PHYSICS LETTERS,2015,32(8).
APA Li, P ,Guo, HX ,Guo, Q ,Zhang, JX ,&Wei, Y .(2015).Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors.CHINESE PHYSICS LETTERS,32(8).
MLA Li, P ,et al."Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors".CHINESE PHYSICS LETTERS 32.8(2015).
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
Laser-Induced Single(1049KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Li, P (Li Pei)]的文章
[Guo, HX (Guo Hong-Xia)]的文章
[Guo, Q (Guo Qi)]的文章
百度学术
百度学术中相似的文章
[Li, P (Li Pei)]的文章
[Guo, HX (Guo Hong-Xia)]的文章
[Guo, Q (Guo Qi)]的文章
必应学术
必应学术中相似的文章
[Li, P (Li Pei)]的文章
[Guo, HX (Guo Hong-Xia)]的文章
[Guo, Q (Guo Qi)]的文章
相关权益政策
暂无数据
收藏/分享
文件名: Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors.pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。