Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors
Li, P (Li Pei); Guo, HX (Guo Hong-Xia); Guo, Q (Guo Qi); Zhang, JX (Zhang Jin-Xin); Wei, Y (Wei Ying)
2015
Source PublicationCHINESE PHYSICS LETTERS
Volume32Issue:8
Abstract

We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon (LOCOS) and deep trench isolation (DTI). The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the collector-substrate (C/S) junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.

DOI10.1088/0256-307X/32/8/088505
Indexed BySCI
WOS IDWOS:000359265600050
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5149
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Key Lab Funct Mat & Devices Special Environm CAS, Urumqi 830011, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Northwest Inst Nucl Technol, Xian 710024, Peoples R China
4.Xi An Jiao Tong Univ, Sch Nucl Sci & Tecnol, Xian 710049, Peoples R China
Recommended Citation
GB/T 7714
Li, P ,Guo, HX ,Guo, Q ,et al. Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors[J]. CHINESE PHYSICS LETTERS,2015,32(8).
APA Li, P ,Guo, HX ,Guo, Q ,Zhang, JX ,&Wei, Y .(2015).Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors.CHINESE PHYSICS LETTERS,32(8).
MLA Li, P ,et al."Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors".CHINESE PHYSICS LETTERS 32.8(2015).
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