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Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide
Liu, Y (Liu Yuan); Chen, HB (Chen Hai-Bo); Liu, YR (Liu Yu-Rong); Wang, X (Wang Xin); En, YF (En Yun-Fei); Li, B (Li Bin); Lu, YD (Lu Yu-Dong)
2015
发表期刊CHINESE PHYSICS B
卷号24期号:8
摘要

Low frequency noise behaviors of partially depleted silicon-on-insulator (PDSOI) n-channel metal-oxide semiconductors (MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from 44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm(2)/V.s to 363.65 cm(2)/V.s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7 x 10(-10) V-2.Hz(-1) and 2.7 x 10(-8) V-2 .Hz(-1), respectively, while the extracted average trap density in the buried oxide increases from 1.42 x 10(17) cm(-3).eV(-1) to 6.16 x 10(18) cm(-3).eV(-1). Based on carrier mobility fluctuation theory, the extracted average Hooge's parameter in these devices increases from 3.92 x 10(-5) to 1.34 x 10(-2) after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M.rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are 10.82 V and 31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

关键词SilicOn On Insulator Ion implantatIon Ionizing Radiation Low Frequency Noise
DOI10.1088/1674-1056/24/8/088503
收录类别SCI
WOS记录号WOS:000361906000094
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5148
专题材料物理与化学研究室
作者单位1.CEPREI, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China
2.China Elect Technol Grp Corp, Res Inst 58, Wuxi 214035, Peoples R China
3.S China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China
4.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
推荐引用方式
GB/T 7714
Liu, Y ,Chen, HB ,Liu, YR ,et al. Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide[J]. CHINESE PHYSICS B,2015,24(8).
APA Liu, Y .,Chen, HB .,Liu, YR .,Wang, X .,En, YF .,...&Lu, YD .(2015).Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide.CHINESE PHYSICS B,24(8).
MLA Liu, Y ,et al."Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide".CHINESE PHYSICS B 24.8(2015).
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