Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials
Ma, LY (Ma Li-Ya); Li, YD (Li Yu-Dong); Guo, Q (Guo Qi); Ai, EK (Ai Er-Ken); Wang, HJ (Wang Hai-Jiao); Wang, B (Wang Bo); Zeng, JZ (Zeng Jun-Zhe)
2015
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号64期号:15页码:252-258
摘要

Minimizing the impact of radiation-induced degradation on optoelectronic devices is important in several applications. Satellites and other spacecraft that fly in near-earth orbits (below 3.8 earth radius) are extremely susceptible to radiation damage caused by the high flux of electrons trapped in the earth's magnetosphere. Optoelectronic devices are particularly vulnerable to displacement damage caused by electrons and protons. Effects of 1 MeV electron beam irradiation on the photoluminescence properties of In0.53Ga0.47As/InP quantum well (QW) and bulk structures, which are grown by metal-organic vapor phase epitaxy, are investigated. Samples are irradiated at room temperature using an ELV-8II accelerator with 1 MeV electron at doses ranging from 5 x 10(12) to 9 x 10(14) cm(-2), and a dose rate of 1.075 x 10(10) cm(-2).s(-1). Photoluminescence measurements are made using a 532 nm laser for excitation and a cooled Ge detector with lock-in techniques for signal detection. Photoluminescence intensity of all the structures is degraded after irradiation, and its reduction increases with increasing total dose of irradiation. Electron beam irradiation causes a larger reduction in the photoluminescence intensity and carrier lifetime of the bulk than that of quantum well. Photoluminescence intensity of five-layer quantum wells degenerates to 9% that before irradiation as the fluence reaches 6 x 10(14) cm(-2). As the electron beams bombard into the sample, the destruction of the lattice integrity will cause the decrease in the number of excitons and intensity of photoluminescence. Electron beam irradiation introduces defects in the samples, increases the density of the nonradiative recombination centers, and results in the decrease of carrier mobility. In a quantum well structure, due to the two-dimensional confinement, the probability of carrier nonradiative recombination at radiation-induced defect centers will be reduced. The reduction of photoluminescence intensity in the bulk is severer than in the quantum well while the cross-sectional area which is sensitive to radiation is kept the same. The number of interface defects which are produced by electron irradiation will increase with the number of layers in quantum well and the heterojunction interface of quantum wells, so is the degration of photoluminescence intensity. The degration is mainly due to the increase of non-radiative centers in the samples. By comparing the different structures, the quantum well structure shows a better radiation resistance.

关键词In0.53ga0.47as/inp Quantum Well Electron Beam Irradiation Photoluminescence
DOI10.7498/aps.64.154217
收录类别SCI
WOS记录号WOS:000362976600032
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5147
专题中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
通讯作者Guo, Q (Guo Qi)
作者单位1.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Chinese Acad Sci, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
4.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Ma, LY ,Li, YD ,Guo, Q ,et al. Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials[J]. ACTA PHYSICA SINICA,2015,64(15):252-258.
APA Ma, LY .,Li, YD .,Guo, Q .,Ai, EK .,Wang, HJ .,...&Zeng, JZ .(2015).Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials.ACTA PHYSICA SINICA,64(15),252-258.
MLA Ma, LY ,et al."Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials".ACTA PHYSICA SINICA 64.15(2015):252-258.
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