Effects of proton and neutron irradiation on dark signal of charge-coupled device
Zeng, JZ (Zeng Jun-Zhe); Li, YD (Li Yu-Dong); Wen, L (Wen Lin); He, CF (He Cheng-Fa); Guo, Q (Guo Qi); Wang, B (Wang Bo); Maria (Maria); Wei, Y (Wei Yin); Wang, HJ (Wang Hai-Jiao); Wu, DY (Wu Da-You); Wang, F (Wang Fan); Zhou, H (Zhou Hang); Wen, L
2015
Source PublicationACTA PHYSICA SINICA
Volume64Issue:19
Abstract

The proton and neutron irradiation and annealing experiments are carried out on a domestic buried channel charge-coupled device (CCD), Monte Carlo method being applied to calculate the energy deposition of scientific CCD irradiated by proton and neutron, and the radiation damage mechanism of the device is analyzed. The displacement damage dose in N+ buried channel is simulated. During irradiation and annealing experiments, the main parameter (dark signal) is investigated. Results show that the dark signal of the buried channel CCD irradiated by 10 MeV proton and 1 MeV neutron rises obviously. With the same fluence, the increase of dark signal and the displacement damage dose in N+ buried channel caused by 10 MeV proton is larger than that by 1 MeV neutron. Dark signal caused by proton irradiation is divided into surface dark signal and bulk dark signal. Oxide-trapped-charges and interface states may be caused by ionization-generated surface dark signal, and the bulk defects may be caused by displacement-generated bulk dark signal. Neutron irradiation only affects the bulk dark signal. Defects and their annealing temperature are studied. The dark signal of CCD irradiated by proton is greatly reduced after annealing, this phenomenon means that the dark signal is mainly affected by ionization. The proportion of bulk dark signals in total dark signals can be calculated by the remainder of dark signal after annealing, and it is at most about 20% or less. From the formula, the position of energy level of bulk defects has an obvious influence on the bulk dark signal. The energy level in the middle of the forbidden band can provide effective hot carriers. Combining the results of experiment and simulation, when the displacement damage doses in N+ buried channel are the same, the bulk dark signal produced by proton is nearly the same as that produced by neutron. This phenomenon means that the defect levels in the forbidden band gap caused by proton and neutron irradiation have the same contributions to dark signal generation. Effect of proton and neutron irradiation on the bulk dark signal is homogeneous. The displacement damage dose can be used to characterize the degradation degree of the bulk dark signal in CCD after irradiation.

KeywordCharge Coupled Devices Proton Irradiation Neutron Irradiation Transport Simulation
DOI10.7498/aps.64.194208
Indexed BySCI
WOS IDWOS:000362977400019
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5137
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorWen, L
Affiliation1.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zeng, JZ ,Li, YD ,Wen, L ,et al. Effects of proton and neutron irradiation on dark signal of charge-coupled device[J]. ACTA PHYSICA SINICA,2015,64(19).
APA Zeng, JZ .,Li, YD .,Wen, L .,He, CF .,Guo, Q .,...&Wen, L.(2015).Effects of proton and neutron irradiation on dark signal of charge-coupled device.ACTA PHYSICA SINICA,64(19).
MLA Zeng, JZ ,et al."Effects of proton and neutron irradiation on dark signal of charge-coupled device".ACTA PHYSICA SINICA 64.19(2015).
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