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Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor
Zhang, JX (Zhang, Jinxin); Guo, HX (Guo, Hongxia); Zhang, FQ (Zhang, Fengqi); He, CH (He, Chaohui); Li, P (Li, Pei); Yan, YY (Yan, Yunyi); Wang, H (Wang, Hui); Zhang, LX (Zhang, Linxia)
2017
Source PublicationScience China-Information Sciences
ISSN1674-733X
Volume60Issue:12Pages:1-3
DOI10.1007/s11432-017-9249-6
Indexed BySCI
WOS IDWOS:000419034600014
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5119
Collection材料物理与化学研究室
Affiliation1.Xidian Univ, Sch Aerosp Sci & Technol, Xian 710126, Shaanxi, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
3.Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
4.Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China
Recommended Citation
GB/T 7714
Zhang, JX ,Guo, HX ,Zhang, FQ ,et al. Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor[J]. Science China-Information Sciences,2017,60(12):1-3.
APA Zhang, JX .,Guo, HX .,Zhang, FQ .,He, CH .,Li, P .,...&Zhang, LX .(2017).Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor.Science China-Information Sciences,60(12),1-3.
MLA Zhang, JX ,et al."Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor".Science China-Information Sciences 60.12(2017):1-3.
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