Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors
Ma, LD (Ma, Lindong); Li, YD (Li, Yudong); Guo, Q (Guo, Qi); Wen, L (Wen, Lin); Zhou, D (Zhou, Dong); Feng, J (Feng, Jie); Liu, Y (Liu, Yuan); Zeng, JZ (Zeng, Junzhe); Zhang, X (Zhang, Xiang); Wang, TH (Wang, Tianhui)
2017
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume26Issue:11Pages:1-5
Abstract

Radiation effects on complementary metal-oxide-semiconductor (CMOS) active pixel sensors (APS) induced by proton and gamma-ray are presented. The samples are manufactured with the standards of 0.35 mu m CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 x 10(11) protons/cm(2) and 2.14 x 10(11) protons/cm(2), respectively, while another sample has been exposed un-biased to 65 krad(Si) Co-60 gamma-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both gamma-ray and proton irradiation increase the non-uniformity of the signal, but the non-uniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed, especially for the interaction induced by proton displacement damage and total ion dose (TID) damage.

KeywordComplementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor Dark Current Fixed-pattern Noise Quantum Efficiency
DOI10.1088/1674-1056/26/11/114212
Indexed BySCI
WOS IDWOS:000415072400012
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5083
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorLi, YD (Li, Yudong)
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Ma, LD ,Li, YD ,Guo, Q ,et al. Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors[J]. CHINESE PHYSICS B,2017,26(11):1-5.
APA Ma, LD .,Li, YD .,Guo, Q .,Wen, L .,Zhou, D .,...&Wang, TH .(2017).Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors.CHINESE PHYSICS B,26(11),1-5.
MLA Ma, LD ,et al."Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors".CHINESE PHYSICS B 26.11(2017):1-5.
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