An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation
Ma, T (Ma, Teng); Zheng, QW (Zheng, Qi-Wen); Cui, JW (Cui, Jiang-Wei); Zhou, H (Zhou, Hang); Su, DD (Su, Dan-Dan); Yu, XF (Yu, Xue-Feng); Guo, Q (Guo, Qi)
2017
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume34Issue:7Pages:181-184
Abstract

The effects of proton irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of partially depleted SOI devices are experimentally investigated. It is demonstrated that heavy-ion irradiation will induce the decrease of TDDB lifetime for many device types, but we are amazed to find a measurable increase in the TDDB lifetime and a slight decrease in the radiation-induced leakage current after proton irradiation at the nominal operating irradiation bias. We interpret these results and mechanisms in terms of the effects of radiation-induced traps on the stressing current during the reliability testing, which may be significant to expand the understanding of the radiation effects of the devices used in the proton radiation environment.

DOI10.1088/0256-307X/34/7/076104
Indexed BySCI
WOS IDWOS:000410696400040
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5058
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorYu, XF (Yu, Xue-Feng)
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Ma, T ,Zheng, QW ,Cui, JW ,et al. An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation[J]. CHINESE PHYSICS LETTERS,2017,34(7):181-184.
APA Ma, T .,Zheng, QW .,Cui, JW .,Zhou, H .,Su, DD .,...&Guo, Q .(2017).An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation.CHINESE PHYSICS LETTERS,34(7),181-184.
MLA Ma, T ,et al."An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation".CHINESE PHYSICS LETTERS 34.7(2017):181-184.
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