An investigation of ionizing radiation damage in different SiGe processes
Li, P (Li, Pei); Liu, MH (Liu, Mo-Han); He, CH (He, Chao-Hui); Guo, HX (Guo, Hong-Xia); Zhang, JX (Zhang, Jin-Xin); Ma, T (Ma, Ting)
2017
发表期刊CHINESE PHYSICS B
卷号26期号:8
摘要

Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs. The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT, and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT. The result suggests that the simulations are consistent with the experiment, and indicates that the geometry of the EB-spacer, the area of the Si/SiO2 interface and the isolation structure could be contributing to the different ionizing radiation damage.

关键词Different Silicon-germanium Process Ionizing Radiation Damage Numerical Simulation
DOI10.1088/1674-1056/26/8/088503
收录类别SCI
WOS记录号WOS:000407024700003
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/5049
专题中国科学院特殊环境功能材料与器件重点试验室
作者单位1.Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Peoples R China
2.Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China
3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
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Li, P ,Liu, MH ,He, CH ,et al. An investigation of ionizing radiation damage in different SiGe processes[J]. CHINESE PHYSICS B,2017,26(8).
APA Li, P ,Liu, MH ,He, CH ,Guo, HX ,Zhang, JX ,&Ma, T .(2017).An investigation of ionizing radiation damage in different SiGe processes.CHINESE PHYSICS B,26(8).
MLA Li, P ,et al."An investigation of ionizing radiation damage in different SiGe processes".CHINESE PHYSICS B 26.8(2017).
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