An investigation of ionizing radiation damage in different SiGe processes
Li, P (Li, Pei); Liu, MH (Liu, Mo-Han); He, CH (He, Chao-Hui); Guo, HX (Guo, Hong-Xia); Zhang, JX (Zhang, Jin-Xin); Ma, T (Ma, Ting)
2017
Source PublicationCHINESE PHYSICS B
Volume26Issue:8
Abstract

Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs. The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT, and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT. The result suggests that the simulations are consistent with the experiment, and indicates that the geometry of the EB-spacer, the area of the Si/SiO2 interface and the isolation structure could be contributing to the different ionizing radiation damage.

KeywordDifferent Silicon-germanium Process Ionizing Radiation Damage Numerical Simulation
DOI10.1088/1674-1056/26/8/088503
Indexed BySCI
WOS IDWOS:000407024700003
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5049
Collection中国科学院特殊环境功能材料与器件重点试验室
Affiliation1.Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Peoples R China
2.Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China
3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Li, P ,Liu, MH ,He, CH ,et al. An investigation of ionizing radiation damage in different SiGe processes[J]. CHINESE PHYSICS B,2017,26(8).
APA Li, P ,Liu, MH ,He, CH ,Guo, HX ,Zhang, JX ,&Ma, T .(2017).An investigation of ionizing radiation damage in different SiGe processes.CHINESE PHYSICS B,26(8).
MLA Li, P ,et al."An investigation of ionizing radiation damage in different SiGe processes".CHINESE PHYSICS B 26.8(2017).
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