Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Zheng, QW (Zheng, Qiwen); Cui, JW (Cui, Jiangwei); Liu, MX (Liu, Mengxin); Su, DD (Su, Dandan); Zhou, H (Zhou, Hang); Ma, T (Ma, Teng); Yu, XF (Yu, Xuefeng); Lu, W (Lu, Wu); Guo, Q (Guo, Qi); Zhao, FZ (Zhao, Fazhan)
2017
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume26Issue:9Pages:1-5
Abstract

In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides' SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side's SNM is decreased and the other data side's SNM is increased. Moreover, measurement of SNM under different supply voltages (V-dd) reveals that SNM is more sensitive to TID under lower Vdd. The impact of TID on SNM under data retention V-dd should be tested, because V-dd of SRAM cell under data retention mode is lower than normal Vdd. The mechanism under the above results is analyzed by measurement of I-V characteristics of SRAM cell transistors.

KeywordSilicon-on-insulator Total Ionizing Dose Static Random Access Memory Static Noise Margin
DOI10.1088/1674-1056/26/9/096103
Indexed BySCI
WOS IDWOS:000409471400003
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5043
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Chinese Acad Sci, Key Lab Silicon Device Technol, Beijing 100049, Peoples R China
Recommended Citation
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Zheng, QW ,Cui, JW ,Liu, MX ,et al. Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin[J]. CHINESE PHYSICS B,2017,26(9):1-5.
APA Zheng, QW .,Cui, JW .,Liu, MX .,Su, DD .,Zhou, H .,...&Zhao, FZ .(2017).Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin.CHINESE PHYSICS B,26(9),1-5.
MLA Zheng, QW ,et al."Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin".CHINESE PHYSICS B 26.9(2017):1-5.
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