Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE
Dai, P (Dai, Pan); Ji, L (Ji, Lian); Tan, M (Tan, Ming); Uchida, S (Uchida, Shiro); Wu, YY (Wu, Yuanyuan); Abuduwayiti, A (Abuduwayiti, Aierken)[ 3 ]; Heini, M (Heini, Maliya); Guo, Q (Guo, Qi); Bian, LF (Bian, Lifeng); Lu, SL (Lu, Shulong); Yang, H (Yang, Hui)
2017
Source PublicationSOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN0927-0248
Volume171Issue:11Pages:118-122
Abstract

For application in space environments, the effect of 1-MeV electron irradiation on wafer-bonded GaInP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all solid state molecular beam epitaxy was studied. After exposure to 1-MeV electron irradiation at 1 x 15 e/cm(2), an end of life remaining factor of approximately 85% was obtained. The wafer bonding interface was studied by spectral response and transmission electron microscopy. 1-MeV electron irradiation was conducted on the individual InGaAsP and InGaAs single junction cell, respectively. The degradation of the four -junction cell was mainly due to damage on the InGaAsP and InGaAs subcells rather than the bonding interface.

KeywordElectron Irradiation Four-junction Solar Cell Molecular Beam Epitaxy
DOI10.1016/j.solmat.2017.06.046
Indexed BySCI
WOS IDWOS:000408298300014
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/5028
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou Ind Pk,Ruoshui Rd 398, Suzhou, Peoples R China
2.Chiba Inst Technol, Dept Mech Sci & Engn, Fac Engn, 2-17-1 Tsudanuma, Narashino, Chiba 2750016, Japan
3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Space Environm, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Dai, P ,Ji, L ,Tan, M ,et al. Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2017,171(11):118-122.
APA Dai, P .,Ji, L .,Tan, M .,Uchida, S .,Wu, YY .,...&Yang, H .(2017).Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE.SOLAR ENERGY MATERIALS AND SOLAR CELLS,171(11),118-122.
MLA Dai, P ,et al."Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE".SOLAR ENERGY MATERIALS AND SOLAR CELLS 171.11(2017):118-122.
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