Total dose responses and reliability issues of 65 nm NMOSFETs
Yu DZ(余德昭)1; Zheng QW(郑齐文)1; Cui JW(崔江维)1; Zhou H(周航)1; Yu XF(余学峰)1; Guo Q(郭旗)1
2016
Source PublicationJournal of Semiconductors
ISSN1674-4926
Volume37Issue:6Pages:133-139
Abstract

In this paper,total dose responses and reliability issues of MOSFETs fabricated by 65 nm CMOS technology were examined. "Radiation-induced narrow channel effect" is observed in a narrow channel device.Similar to total dose responses of NMOSFETs,narrow channel NMOSFEs have larger hot-carrier-induced degradation than wide channel devices.Step Time-Dependent Dielectric Breakdown(TDDB) stresses are applied,and narrow channel devices have higher breakdown voltage than wide channel devices,which agree with "weakest link" theory of TDDB.Experimental results show that linear current,transconductance,saturated drain current and subthreshold swing are superposed degenerated by total dose irradiation and reliability issues,which may result in different lifetime from that considering total dose irradiation reliability issues separately.

Indexed ByCSCD
CSCD IDCSCD:5751259
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4988
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2.Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
3.University of Chinese Academy of Sciences, Beijing 100049, China
Recommended Citation
GB/T 7714
Yu DZ,Zheng QW,Cui JW,et al. Total dose responses and reliability issues of 65 nm NMOSFETs[J]. Journal of Semiconductors,2016,37(6):133-139.
APA Yu DZ,Zheng QW,Cui JW,Zhou H,Yu XF,&Guo Q.(2016).Total dose responses and reliability issues of 65 nm NMOSFETs.Journal of Semiconductors,37(6),133-139.
MLA Yu DZ,et al."Total dose responses and reliability issues of 65 nm NMOSFETs".Journal of Semiconductors 37.6(2016):133-139.
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