XJIPC OpenIR  > 材料物理与化学研究室
Thesis Advisor余学峰
Degree Grantor中国科学院大学
Place of Conferral北京
Degree Discipline微电子学与固体电子学
KeywordCmos 热载流子 辐射效应 重离子辐照 Tddb


Other Abstract

The progress of aerospace science and technology put forward new requirements on the performance of the aerospace devices, which leads small size of micro/nano CMOS devices used in the space application stage. Feature dimension reduction brought chip performance boost, but inevitably led to a lot of conventional reliability problems than the big size devices, such as hot carrier effect and time dependent dielectric breakdown and negative (positive) bias instability and other conventional reliability problems.One can find a lot of research about radiation effect and conventional reliability of devices all over the world, space radiation effect, the conventional reliability test and evaluation methods are very mature technology, in space applications, the small size of MOS devices face space radiation environment and conventional reliability challenge at the same time, the reliability criteria to judge a single mechanism can cause components reliability optimistic. The research which consider space radiation factor of micro/nano devices reliability, due to the complexity of interactions between radiation and conventional reliability, radiation and reliable interaction mechanism is not clear, at present work mainly focused on the macro device electric parameter test and analysis.And, more importantly, the radiation environment of device reliability problems have been beyond the constraints of the current conventional reliability test standard, so, in conventional reliability assessment for devices used in the space environment, applicability problems still exist in the current method.For micro/nano device reliability problems under irradiation environment, we select a number of process nodes of MOS devices as the research object, the conventional reliability test methods of irradiated micro/nano devices and a new failure mechanism had conducted a more comprehensive and systematic study.New test method for the device take internal electric field change caused by the total dose effect, and the change of microscopic parameters into account, it is an extension of the existing standards and complement, it solved the worst bias problem of heat carrier in the radiation environment, problems of leakage current and how to avoid to produce new failure mechanism, the consideration of these questions and solution makes the new method is not limited to a specific device using the environment and working condition.Specific test section has three dimensions: Vertically, microns, deep sub-micron and nanometer technology nodes devices were used in our tests, horizontally, we adopted the irradiation and unirradiation device, long channel and the short channel one in the tests, vertically, commercial off-the-shelf and radiation hardening devices were used in our experiments.This makes it not only obtained with the reliability of the technological progress of irradiation environment change trend,, but also the impact of channel length and special process related.The results also show that the radiation will affect the subsequent hot carrier reliability, even with the LDD process improvement. And the results of commercial devices showed obvious enhanced hot carrier effect after irradiation. We find that H-gate adopted can effectively avoid the influences of STI.In addition, the components of leakage current is not determined by a single reliability factors, the channel and the change of the gate leakage current is often a result of a combination of radiation and conventional reliability.Different from the previous single event effect, namely, SEU, SET and SEGR which can easily observed in circuit or device heavy ion radiation effectc tests, MIS capacitors in SOI process with large gate oxide area were used as experimental devices in the article .It made us obtain significant achievement in limited radiation time, which could be simply described that latent damages caused by heavy iron on gate oxide reduced its TDDB lifetime considerably and might have catastrophic effects during the devices’ service process. Then we proposed two feasible damage mechanism.To sum up, the small size of MOS devices with its excellent characteristics such as resistance to radiation and integration make it became one of the mainstream of aerospace components, however, the conventional reliability of irradiated devices become the potential problems that can restrict the practical application of micro/nano devices.Our reasearch make the device reliability changes in irradiation environment has further understanding, provide beneficial reference to the device designers, provide risk forecast for the long-term reliability of avionics systems.

Document Type学位论文
Recommended Citation
GB/T 7714
周航. 辐射环境下的微纳米器件可靠性变化机理与试验方法研究[D]. 北京. 中国科学院大学,2017.
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