Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress
Zheng, QW (Zheng Qi-Wen)1; Cui, JW (Cui Jiang-Wei)1; Yu, XF (Yu Xue-Feng)1; Guo, Q (Guo Qi)1; Zhou, H (Zhou Hang)1; Ren, DY (Ren Di-Yuan)1; Yu, XF
2014
Source PublicationCHINESE PHYSICS LETTERS
Volume31Issue:12
AbstractThe larger back-gate voltage stress is applied on 130 nm partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors isolated by shallow trench isolation. The experimental results show that the back-gate sub-threshold hump of the device is eliminated by stress. This observed behavior is caused by the high electric field in the oxide near the bottom corner of the silicon island. The total ionizing dose hardness of devices with pre back-gate stress is enhanced by the interface states induced by stress.
DOI10.1088/0256-307X/31/12/126101
Indexed BySCI
WOS IDWOS:000346158200021
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Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4911
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorYu, XF
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
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Zheng, QW ,Cui, JW ,Yu, XF ,et al. Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress[J]. CHINESE PHYSICS LETTERS,2014,31(12).
APA Zheng, QW .,Cui, JW .,Yu, XF .,Guo, Q .,Zhou, H .,...&Yu, XF.(2014).Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress.CHINESE PHYSICS LETTERS,31(12).
MLA Zheng, QW ,et al."Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress".CHINESE PHYSICS LETTERS 31.12(2014).
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