Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress
Zheng, QW (Zheng Qi-Wen)1; Cui, JW (Cui Jiang-Wei)1; Yu, XF (Yu Xue-Feng)1; Guo, Q (Guo Qi)1; Zhou, H (Zhou Hang)1; Ren, DY (Ren Di-Yuan)1; Yu, XF
2014
发表期刊CHINESE PHYSICS LETTERS
卷号31期号:12
摘要The larger back-gate voltage stress is applied on 130 nm partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors isolated by shallow trench isolation. The experimental results show that the back-gate sub-threshold hump of the device is eliminated by stress. This observed behavior is caused by the high electric field in the oxide near the bottom corner of the silicon island. The total ionizing dose hardness of devices with pre back-gate stress is enhanced by the interface states induced by stress.
DOI10.1088/0256-307X/31/12/126101
收录类别SCI
WOS记录号WOS:000346158200021
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文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4911
专题中国科学院特殊环境功能材料与器件重点试验室
通讯作者Yu, XF
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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Zheng, QW ,Cui, JW ,Yu, XF ,et al. Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress[J]. CHINESE PHYSICS LETTERS,2014,31(12).
APA Zheng, QW .,Cui, JW .,Yu, XF .,Guo, Q .,Zhou, H .,...&Yu, XF.(2014).Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress.CHINESE PHYSICS LETTERS,31(12).
MLA Zheng, QW ,et al."Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress".CHINESE PHYSICS LETTERS 31.12(2014).
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