Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation
Zheng, QW (Zheng Qi-Wen)1; Cui, JW (Cui Jiang-Wei)1; Zhou, H (Zhou Hang)1; Yu, DZ (Yu De-Zhao)1; Yu, XF (Yu Xue-Feng)1; Lu, W (Lu Wu)1; Guo, Q (Guo Qi)1; Ren, DY (Ren Di-Yuan)1
2015
发表期刊CHINESE PHYSICS B
卷号24期号:10
摘要Functional failure mode of commercial deep sub-micron static random access memory (SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result.
关键词Total Dose Irradiation Static Random Access Memory Functional Failure Mode
DOI10.1088/1674-1056/24/10/106106
收录类别SCI
WOS记录号WOS:000363327400060
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被引频次:4[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4910
专题中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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Zheng, QW ,Cui, JW ,Zhou, H ,et al. Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation[J]. CHINESE PHYSICS B,2015,24(10).
APA Zheng, QW .,Cui, JW .,Zhou, H .,Yu, DZ .,Yu, XF .,...&Ren, DY .(2015).Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation.CHINESE PHYSICS B,24(10).
MLA Zheng, QW ,et al."Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation".CHINESE PHYSICS B 24.10(2015).
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