Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells
Wang, HJ (Wang Hai-Jiao)1; Li, YD (Li Yu-Dong)1; Guo, Q (Guo Qi)1; Ma, LY (Ma Li-Ya)1; Wen, L (Wen Lin)1; Wang, B (Wang Bo)1
2015
发表期刊CHINESE PHYSICS LETTERS
ISSN0256-307X
卷号32期号:5页码:1-4
摘要

Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells (namely triple wells and five wells embedded) and bulk InGaAs are investigated after high energy electron irradiation. It is observed that the photoluminescence (PL) intensity of bulk InGaAs materials is enhanced after low dose electron irradiation and the PL intensity for all the three samples is degraded dramatically when the electron dose is relatively high. With respect to the room-temperature annealing, we find that the PL intensity for both samples recovers relatively fast at the initial stage. The PL performance of multiple quantum-well samples shows better recovery after irradiation compared with the results of bulk InGaAs materials. Meanwhile, the recovery speed factors of multiple quantum-well samples are relatively faster than those of the bulk InGaAs materials as well. We infer that the recovery difference between the quantum-well materials and bulk materials originates from the fact that the radiation induced defects are confined in the quantum wells as a consequence of the free energy barrier between the In0.53Ga0.47As wells and InP barrier layers.

DOI10.1088/0256-307X/32/5/056102
收录类别SCI
WOS记录号WOS:000354093300025
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4891
专题中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
通讯作者Li, YD (Li Yu-Dong)
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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Wang, HJ ,Li, YD ,Guo, Q ,et al. Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells[J]. CHINESE PHYSICS LETTERS,2015,32(5):1-4.
APA Wang, HJ ,Li, YD ,Guo, Q ,Ma, LY ,Wen, L ,&Wang, B .(2015).Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells.CHINESE PHYSICS LETTERS,32(5),1-4.
MLA Wang, HJ ,et al."Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells".CHINESE PHYSICS LETTERS 32.5(2015):1-4.
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