Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment
Li, P (Li Pei)1; Guo, HX (Guo Hong-Xia)1; Guo, Q (Guo Qi)1; Zhang, JX (Zhang Jin-Xin)1; Xiao, Y (Xiao Yao)1; Wei, Y (Wei Ying)1; Cui, JW (Cui Jiang-Wei)1; Wen, L (Wen Lin)1; Liu, MH (Liu Mo-Han)1; Wang, X (Wang Xin)1
2015
Source PublicationCHINESE PHYSICS B
Volume24Issue:8
AbstractIn this paper the single-event responses of the silicon germanium heterojunction bipolar transistors (SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional (3D) simulation model is established, the single event effect (SEE) simulation is further carried out on the basis of SiGe HBT devices, and then, together with the laser microbeam test, the charge collection behaviors are analyzed, including the single event transient (SET) induced transient terminal currents, and the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the nature of the current transient is controlled by the behaviors of the collector-substrate (C/S) junction and charge collection by sensitive electrodes, thereby giving out the sensitive area and electrode of SiGe HBT in SEE.
KeywordSige Heterojunction Bipolar Transistor Single Event Effect Three-dimensional Numerical Simulation Laser Microbeam Experiment
DOI10.1088/1674-1056/24/8/088502
Indexed BySCI
WOS IDWOS:000361906000093
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Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4890
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Northwest Inst Nucl Technol, Xian 710024, Peoples R China
5.Xi An Jiao Tong Univ, Sch Sci, Xian 710049, Peoples R China
Recommended Citation
GB/T 7714
Li, P ,Guo, HX ,Guo, Q ,et al. Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment[J]. CHINESE PHYSICS B,2015,24(8).
APA Li, P .,Guo, HX .,Guo, Q .,Zhang, JX .,Xiao, Y .,...&Wang, X .(2015).Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment.CHINESE PHYSICS B,24(8).
MLA Li, P ,et al."Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment".CHINESE PHYSICS B 24.8(2015).
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