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An Investigation of ELDRS in Different SiGe Processes
Li, P (Li, Pei); He, CH (He, Chaohui); Guo, HX (Guo, Hongxia); Guo, Q (Guo, Qi); Zhang, JX (Zhang, Jinxin); Liu, MH (Liu, Mohan)
2017
发表期刊IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷号64期号:5页码:1137-1141
摘要Enhanced low dose rate sensitivity (ELDRS) in different process Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. Low and high dose rate irradiations are performed to evaluate the ELDRS of SiGe HBTs manufactured by Tsinghua University (THU). THU SiGe HBTs experience significantly low dose rate sensitivity than that of IBM 8HP SiGe HBTs and behave a "true" dose rate effect. TCAD models were used to explicate the microcosmic structure in THU and IBM 8HP SiGe HBTs. Comparison and discussion show that different SiGe processes may involve different HBT structures and device designs which are the critical influence of ELDRS effect. The different responses of ELDRS should be first attributed to the device structure and design in nature, particularly the geometry of emitter-base junction and the isolation structure.
关键词Different Silicon-germanium (Sige) Process Emitter-base (Eb)-spacer Geometry Enhanced Low Dose Rate Sensitivity (Eldrs) Isolation Structure
DOI10.1109/TNS.2017.2686429
收录类别SCI
WOS记录号WOS:000401949800005
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4816
专题材料物理与化学研究室
作者单位Xi An Jiao Tong Univ, Xian 710049, Peoples R China; Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China; Northwest Inst Nucl Technol, Xian 710024, Peoples R China
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Li, P ,He, CH ,Guo, HX ,et al. An Investigation of ELDRS in Different SiGe Processes[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2017,64(5):1137-1141.
APA Li, P ,He, CH ,Guo, HX ,Guo, Q ,Zhang, JX ,&Liu, MH .(2017).An Investigation of ELDRS in Different SiGe Processes.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,64(5),1137-1141.
MLA Li, P ,et al."An Investigation of ELDRS in Different SiGe Processes".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 64.5(2017):1137-1141.
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