Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy
Zhou, SX (Zhou, Shuxing); Qi, M (Qi, Ming); Ai, LK (Ai, Likun); Wang, SM (Wang, Shumin); Xu, AH (Xu, Anhuai); Guo, Q (Guo, Qi)
2017
发表期刊JAPANESE JOURNAL OF APPLIED PHYSICS
卷号56期号:3
摘要The effects of Bi flux and In/Ga ratio on Bi incorporation and electrical properties of InGaAsBi grown by gas source molecular beam epitaxy were systematically studied. It is found that use of a low In/Ga ratio has an enhancement effect on the incorporation of Bi and its content increases linearly with Bi flux until reach a saturation. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but does not degrade the electron mobility for the Bi content up to 6.2%. Up to 7.5% of Bi incorporation has been confirmed by Rutherford backscattering spectroscopy (RBS) and a maximum electron mobility of 5600 cm(2)& V-1.s(-1) at room temperature was achieved in InGaAsBi with x(Bi) = 6.2%, which is the highest value reported in InGaAsBi with x(Bi) > 5%.
DOI10.7567/JJAP.56.035505
WOS记录号WOS:000395890700001
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4788
专题中国科学院特殊环境功能材料与器件重点试验室
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
3.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
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Zhou, SX ,Qi, M ,Ai, LK ,et al. Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2017,56(3).
APA Zhou, SX ,Qi, M ,Ai, LK ,Wang, SM ,Xu, AH ,&Guo, Q .(2017).Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy.JAPANESE JOURNAL OF APPLIED PHYSICS,56(3).
MLA Zhou, SX ,et al."Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy".JAPANESE JOURNAL OF APPLIED PHYSICS 56.3(2017).
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