Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy
Zhou, SX (Zhou, Shuxing); Qi, M (Qi, Ming); Ai, LK (Ai, Likun); Wang, SM (Wang, Shumin); Xu, AH (Xu, Anhuai); Guo, Q (Guo, Qi)
2017
Source PublicationJAPANESE JOURNAL OF APPLIED PHYSICS
ISSN0021-4922
Volume56Issue:3Pages:1-5
Abstract

The effects of Bi flux and In/Ga ratio on Bi incorporation and electrical properties of InGaAsBi grown by gas source molecular beam epitaxy were systematically studied. It is found that use of a low In/Ga ratio has an enhancement effect on the incorporation of Bi and its content increases linearly with Bi flux until reach a saturation. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but does not degrade the electron mobility for the Bi content up to 6.2%. Up to 7.5% of Bi incorporation has been confirmed by Rutherford backscattering spectroscopy (RBS) and a maximum electron mobility of 5600 cm(2)& V-1.s(-1) at room temperature was achieved in InGaAsBi with x(Bi) = 6.2%, which is the highest value reported in InGaAsBi with x(Bi) > 5%.

DOI10.7567/JJAP.56.035505
WOS IDWOS:000395890700001
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4788
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
3.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
Recommended Citation
GB/T 7714
Zhou, SX ,Qi, M ,Ai, LK ,et al. Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2017,56(3):1-5.
APA Zhou, SX ,Qi, M ,Ai, LK ,Wang, SM ,Xu, AH ,&Guo, Q .(2017).Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy.JAPANESE JOURNAL OF APPLIED PHYSICS,56(3),1-5.
MLA Zhou, SX ,et al."Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy".JAPANESE JOURNAL OF APPLIED PHYSICS 56.3(2017):1-5.
Files in This Item:
File Name/Size DocType Version Access License
Growth and electrica(741KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhou, SX (Zhou, Shuxing)]'s Articles
[Qi, M (Qi, Ming)]'s Articles
[Ai, LK (Ai, Likun)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhou, SX (Zhou, Shuxing)]'s Articles
[Qi, M (Qi, Ming)]'s Articles
[Ai, LK (Ai, Likun)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhou, SX (Zhou, Shuxing)]'s Articles
[Qi, M (Qi, Ming)]'s Articles
[Ai, LK (Ai, Likun)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.