Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors
Wang, F (Wang Fan); Li, YD (Li Yu-Dong); Guo, Q (Guo Qi); Wang, B (Wang Bo); Zhang, XY (Zhang Xing-Yao); Wen, L (Wen Lin); He, CF (He Cheng-Fa)
2016
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号65期号:2页码:180-185
摘要

Radiation effects on four-transistor (4T) active pixel sensor complementary metal-oxide-semiconductor (CMOS) image sensor induced by gamma-ray are presented. The samples are 4 megapixels resolution CMOS image sensor using 11 mu m pitch high dynamic 4T pixels. They are manufactured with 0.18 mu m specialized CMOS image sensortechnology. Three samples have been exposed to 200 krad(Si) Co-60 gamma-ray with different biasing condition (1(#) is static-biased, 2(#) dynamic-biased, and 3(#) is grounded during irradiation), and the dose rate is 50 rad(Si)/s. The influences of radiation on full well charge capacity, dark current, and conversion gain of the device are investigated. Experimental result shows that the conversion gain is not sensitive to the ionizing radiation, and it is mainly determined by the CMOS digital or analog circuits. It is known that the total ionizing dose for induced degradation in deep submicron MOSFET is negligible and so there is almost no radiation effect on the digital or analog circuits exposed to the ionizing radiation. Therefore, conversion gain does not have obvious degradation after irradiation. While full well charge capacity has a degradation after irradiation, which is due to the change of TG channel doping profile induced by the radiation. As the dose increases, dark current increases rapidly. The main source of dark current in 4T CMOS image sensor is the current from STI interface and TG-PD overlap region. Experimental result also shows that different from 3T CMOS image sensor, there is no biasing effect in 4T CMOS image sensor. This is because for the 4T CMOS image sensor most of the degradation come from STI interface and TG-PD overlap region, while biasing condition almost has no influence on both of them.

关键词Complementary Metal Oxide Semiconductor Image Sensor Total Ionizing Dose Radiation Effect Pinned Photodiode Full Well Chargecapacity
DOI10.7498/aps.65.024212
收录类别SCI
WOS记录号WOS:000370942000023
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4688
专题中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
通讯作者Li, YD (Li Yu-Dong)
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
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Wang, F ,Li, YD ,Guo, Q ,et al. Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors[J]. ACTA PHYSICA SINICA,2016,65(2):180-185.
APA Wang, F .,Li, YD .,Guo, Q .,Wang, B .,Zhang, XY .,...&He, CF .(2016).Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors.ACTA PHYSICA SINICA,65(2),180-185.
MLA Wang, F ,et al."Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors".ACTA PHYSICA SINICA 65.2(2016):180-185.
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