Total ionizing dose effects of domestic SiGe HBTs under different dose rates
Liu, MH (Liu, Mo-Han); Lu, W (Lu, Wu); Ma, WY (Ma, Wu-Ying); Wang, X (Wang, Xin); Guo, Q (Guo, Qi); He, CF (He, Cheng-Fa); Jiang, K (Jiang, Ke); Li, XL (Li, Xiao-Long); Xun, MZ (Xun, Ming-Zhu)
2016
Source PublicationCHINESE PHYSICS C
ISSN1674-1137
Volume40Issue:3Pages:1-5
Abstract

The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose rates of 800 mGy(Si)/s and 1.3 mGy(Si)/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect (TDE). For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity (ELDRS) effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.

KeywordSige Hbts Tid Eldrs Annealing
DOI10.1088/1674-1137/40/3/036003
Indexed BySCI
WOS IDWOS:000372390600015
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4677
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorLu, W (Lu, Wu)
Affiliation1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China
Recommended Citation
GB/T 7714
Liu, MH ,Lu, W ,Ma, WY ,et al. Total ionizing dose effects of domestic SiGe HBTs under different dose rates[J]. CHINESE PHYSICS C,2016,40(3):1-5.
APA Liu, MH .,Lu, W .,Ma, WY .,Wang, X .,Guo, Q .,...&Xun, MZ .(2016).Total ionizing dose effects of domestic SiGe HBTs under different dose rates.CHINESE PHYSICS C,40(3),1-5.
MLA Liu, MH ,et al."Total ionizing dose effects of domestic SiGe HBTs under different dose rates".CHINESE PHYSICS C 40.3(2016):1-5.
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