Total ionizing dose effects of domestic SiGe HBTs under different dose rates
Liu, MH (Liu, Mo-Han); Lu, W (Lu, Wu); Ma, WY (Ma, Wu-Ying); Wang, X (Wang, Xin); Guo, Q (Guo, Qi); He, CF (He, Cheng-Fa); Jiang, K (Jiang, Ke); Li, XL (Li, Xiao-Long); Xun, MZ (Xun, Ming-Zhu); Lu, W
2016
发表期刊CHINESE PHYSICS C
卷号40期号:3
摘要The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose rates of 800 mGy(Si)/s and 1.3 mGy(Si)/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect (TDE). For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity (ELDRS) effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.
关键词Sige Hbts Tid Eldrs Annealing
DOI10.1088/1674-1137/40/3/036003
收录类别SCI
WOS记录号WOS:000372390600015
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4677
专题中国科学院特殊环境功能材料与器件重点试验室
通讯作者Lu, W
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China
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Liu, MH ,Lu, W ,Ma, WY ,et al. Total ionizing dose effects of domestic SiGe HBTs under different dose rates[J]. CHINESE PHYSICS C,2016,40(3).
APA Liu, MH .,Lu, W .,Ma, WY .,Wang, X .,Guo, Q .,...&Lu, W.(2016).Total ionizing dose effects of domestic SiGe HBTs under different dose rates.CHINESE PHYSICS C,40(3).
MLA Liu, MH ,et al."Total ionizing dose effects of domestic SiGe HBTs under different dose rates".CHINESE PHYSICS C 40.3(2016).
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