Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT
Zhang, JX (Zhang, Jinxin); Guo, Q (Guo, Qi); Guo, HX (Guo, Hongxia); Lu, W (Lu, Wu); He, CH (He, Chaohui); Wang, X (Wang, Xin)[ 2 ]; Li, P (Li, Pei); Liu, M (Liu, Mohan)
2016
发表期刊IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷号63期号:2页码:1251-1258
摘要The effect of bias condition on total ionizing dose (TID) of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. The SiGe HBTs are set at forward, saturated, cutoff, and all-grounded biases during Co-60 gamma irradiation. After each irradiation stops, the forward Gummel characteristic and inverse Gummel characteristic are measured, and a 3-D simulation of TID for SiGe HBT is performed. The mechanism of TID in different bias conditions is obtained by analyzing normalized excess base current. The results show that the TID damages are different at various irradiation biases of the SiGe HBT, and the worst bias between forward and inverse Gummel characteristics exhibits inconsistently. The reason could be attributed to different defects produced and accumulated in oxide layers by irradiation at various bias conditions. To be specific, the oxide trap charges (N-ot) in emitter/base (E/B) Spacer is important to the forward Gummel characteristic, yet the N-ot in LOCOS determines the inverse Gummel characteristic. However, after long time irradiation, the interface states (N-it) both in E/B Spacer and LOCOS dominate the damage to the SiGe HBT despite in forward Gummel mode or inverse Gummel mode.
关键词Bias Conditions Co-60 Gamma Irradiation Sige Hbt Total Ionizing Dose Effect
DOI10.1109/TNS.2016.2522158
收录类别SCI
WOS记录号WOS:000375035800021
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4671
专题中国科学院特殊环境功能材料与器件重点试验室
作者单位1.Xi An Jiao Tong Univ, Xian 710049, Shanxi, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Xinjiang, Peoples R China
3.Northwest Inst Nucl Technol, Xian 710024, Shanxi, Peoples R China
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Zhang, JX ,Guo, Q ,Guo, HX ,et al. Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2016,63(2):1251-1258.
APA Zhang, JX .,Guo, Q .,Guo, HX .,Lu, W .,He, CH .,...&Liu, M .(2016).Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,63(2),1251-1258.
MLA Zhang, JX ,et al."Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 63.2(2016):1251-1258.
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