Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT
Zhang, JX (Zhang, Jinxin); Guo, Q (Guo, Qi); Guo, HX (Guo, Hongxia); Lu, W (Lu, Wu); He, CH (He, Chaohui); Wang, X (Wang, Xin)[ 2 ]; Li, P (Li, Pei); Liu, M (Liu, Mohan)
2016
Source PublicationIEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN0018-9499
Volume63Issue:2Pages:1251-1258
Abstract

The effect of bias condition on total ionizing dose (TID) of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. The SiGe HBTs are set at forward, saturated, cutoff, and all-grounded biases during Co-60 gamma irradiation. After each irradiation stops, the forward Gummel characteristic and inverse Gummel characteristic are measured, and a 3-D simulation of TID for SiGe HBT is performed. The mechanism of TID in different bias conditions is obtained by analyzing normalized excess base current. The results show that the TID damages are different at various irradiation biases of the SiGe HBT, and the worst bias between forward and inverse Gummel characteristics exhibits inconsistently. The reason could be attributed to different defects produced and accumulated in oxide layers by irradiation at various bias conditions. To be specific, the oxide trap charges (N-ot) in emitter/base (E/B) Spacer is important to the forward Gummel characteristic, yet the N-ot in LOCOS determines the inverse Gummel characteristic. However, after long time irradiation, the interface states (N-it) both in E/B Spacer and LOCOS dominate the damage to the SiGe HBT despite in forward Gummel mode or inverse Gummel mode.

KeywordBias Conditions Co-60 Gamma Irradiation Sige Hbt Total Ionizing Dose Effect
DOI10.1109/TNS.2016.2522158
Indexed BySCI
WOS IDWOS:000375035800021
Citation statistics
Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4671
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Affiliation1.Xi An Jiao Tong Univ, Xian 710049, Shanxi, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Xinjiang, Peoples R China
3.Northwest Inst Nucl Technol, Xian 710024, Shanxi, Peoples R China
Recommended Citation
GB/T 7714
Zhang, JX ,Guo, Q ,Guo, HX ,et al. Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2016,63(2):1251-1258.
APA Zhang, JX .,Guo, Q .,Guo, HX .,Lu, W .,He, CH .,...&Liu, M .(2016).Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,63(2),1251-1258.
MLA Zhang, JX ,et al."Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 63.2(2016):1251-1258.
Files in This Item:
File Name/Size DocType Version Access License
Impact of Bias Condi(1341KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhang, JX (Zhang, Jinxin)]'s Articles
[Guo, Q (Guo, Qi)]'s Articles
[Guo, HX (Guo, Hongxia)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhang, JX (Zhang, Jinxin)]'s Articles
[Guo, Q (Guo, Qi)]'s Articles
[Guo, HX (Guo, Hongxia)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhang, JX (Zhang, Jinxin)]'s Articles
[Guo, Q (Guo, Qi)]'s Articles
[Guo, HX (Guo, Hongxia)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.