Na2Hg3M2S8 (M = Si, Ge, and Sn): New Infrared Nonlinear Optical Materials with Strong Second Harmonic Generation Effects and High Laser-Damage Thresholds
Wu, K (Wu, Kui); Yang, ZH (Yang, Zhihua); Pan, SL (Pan, Shilie)
2016
Source PublicationCHEMISTRY OF MATERIALS
ISSN0897-4756
Volume28Issue:8Pages:2795-2801
Abstract

A new family of noncentrosymmetric isostructural compounds, Na2Hg3M2S8 (M = Si, Ge, and Sn), was successfully synthesized. They crystallize in the tetragonal space group P (4) over bar c2 with Z = 2. Their major structures are composed of infinite cross-connected (infinity)(HgS3)(n) chains and isolated [MS4] ligands and show the interesting tunnel features. Interestingly, compared with the structures of A(2)Hg(3)M(2)S(8) (A = alkali metal, Na-Cs), it can be found that the structural symmetries show a gradually rising tendency from Cs to Na analogues as a result of cation size effect, which rarely exists in quaternary alkali metal chalcogenides. Property measurements show that title compounds exhibit strong second harmonic generation (SHG) effects with a phase-matching behavior at 2.09 mu m, wide transparency range in the infrared (IR) region, and large laser-damage thresholds (LDTs). Remarkably, Na2Hg3Si2S8 and Na2Hg3Ge2S8 achieve the suitable balance between large SHG effects (1.3 and 2.2 X benchmark AgGaS2) and high LDTs (4.5 and 3 x AgGaS2), respectively, and can be expected to be potential nonlinear optical (NLO) candidates in the IR region. Moreover, band structures and NLO properties of title compounds are also theoretically studied, and the calculated NLO coefficients are consistent with the experimental observations.

DOI10.1021/acs.chemmater.6b00683
Indexed BySCI
WOS IDWOS:000375244500037
Citation statistics
Cited Times:61[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4667
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorPan, SL (Pan, Shilie)
Affiliation1.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Devices, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, 40-1 South Beijing Rd, Urumqi, Peoples R China
Recommended Citation
GB/T 7714
Wu, K ,Yang, ZH ,Pan, SL . Na2Hg3M2S8 (M = Si, Ge, and Sn): New Infrared Nonlinear Optical Materials with Strong Second Harmonic Generation Effects and High Laser-Damage Thresholds[J]. CHEMISTRY OF MATERIALS,2016,28(8):2795-2801.
APA Wu, K ,Yang, ZH ,&Pan, SL .(2016).Na2Hg3M2S8 (M = Si, Ge, and Sn): New Infrared Nonlinear Optical Materials with Strong Second Harmonic Generation Effects and High Laser-Damage Thresholds.CHEMISTRY OF MATERIALS,28(8),2795-2801.
MLA Wu, K ,et al."Na2Hg3M2S8 (M = Si, Ge, and Sn): New Infrared Nonlinear Optical Materials with Strong Second Harmonic Generation Effects and High Laser-Damage Thresholds".CHEMISTRY OF MATERIALS 28.8(2016):2795-2801.
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