Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors
Zheng, QW (Zheng, Qi-Wen); Cui, JW (Cui, Jiang-Wei); Zhou, H (Zhou, Hang); Yu, DZ (Yu, De-Zhao); Yu, XF (Yu, Xue-Feng); Guo, Q (Guo, Qi)
2016
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume33Issue:7Pages:1-3
Abstract

The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.

DOI10.1088/0256-307X/33/7/076102
Indexed BySCI
WOS IDWOS:000379260700029
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4651
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Zheng, QW ,Cui, JW ,Zhou, H ,et al. Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors[J]. CHINESE PHYSICS LETTERS,2016,33(7):1-3.
APA Zheng, QW ,Cui, JW ,Zhou, H ,Yu, DZ ,Yu, XF ,&Guo, Q .(2016).Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors.CHINESE PHYSICS LETTERS,33(7),1-3.
MLA Zheng, QW ,et al."Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors".CHINESE PHYSICS LETTERS 33.7(2016):1-3.
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