Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure
Wang, X (Wang, Xin); Lu, W (Lu, Wu); Ma, WY (Ma, Wu-Ying); Guo, Q (Guo, Qi); Wang, ZK (Wang, Zhi-Kuan); He, CF (He, Cheng-Fa); Liu, MH (Liu, Mo-Han); Li, XL (Li, Xiao-Long); Jia, JC (Jia, Jin-Cheng)
2016
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume33Issue:8Pages:1-3
Abstract

The radiation damage responses of fluorinated and non-fluorinated lateral PNP transistors are studied with specially designed gated-controlled lateral PNP transistors that allow for the extraction of the oxide trapped charge (N-ot) and interface trap (N-it) densities. All the samples are exposed in the Co-60 gamma ray with the dose rate of 0.5 Gy(Si)/s. After the irradiation, the buildup of N-ot and N-it of the samples with total dose is investigated by the gate sweep test technique. The results show that the radiation resistance of fluorinated lateral PNP transistors is significantly enhanced compared with the non-fluorinated ones.

DOI10.1088/0256-307X/33/8/086101
Indexed BySCI
WOS IDWOS:000386179400020
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4644
Collection中国科学院特殊环境功能材料与器件重点试验室
材料物理与化学研究室
Corresponding AuthorLu, W (Lu, Wu)
Affiliation1.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.State Key Lab Analog Integrated Circuit, Chongqing 400060, Peoples R China
Recommended Citation
GB/T 7714
Wang, X ,Lu, W ,Ma, WY ,et al. Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure[J]. CHINESE PHYSICS LETTERS,2016,33(8):1-3.
APA Wang, X .,Lu, W .,Ma, WY .,Guo, Q .,Wang, ZK .,...&Jia, JC .(2016).Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure.CHINESE PHYSICS LETTERS,33(8),1-3.
MLA Wang, X ,et al."Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure".CHINESE PHYSICS LETTERS 33.8(2016):1-3.
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