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SOI CMOS静态随机存储器总剂量辐射效应及评估技术的研究
李明
学位类型硕士
导师余学峰
2011-05-30
学位授予单位中国科学院研究生院
学位授予地点北京
学位专业微电子学与固体电子学
关键词Soi Sram 总剂量辐射效应 评估技术 实验方法
摘要部分耗尽绝缘体上硅(partial-depletion-silicon-on-insulator,简称PD SOI)技术,以其独特的材料结构有效地克服了体硅材料的不足,具有优良的抗单粒子和瞬时辐射能力,因此被应用于空间电子器件,尤其是在空间容易产生单粒子翻转的存储器对SOI技术具有急迫的需求。然而,SOI结构埋氧层的存在,使得SOI器件对总剂量辐射损伤非常敏感,进而极大地制约了SOI器件在航天领域中的广泛应用。因此提高SOI器件的抗辐射能力,发展SOI器件在空间辐射环境下的可靠性保证方法,对促进SOI器件在空间的广泛应用和推动我国航天事业的发展,具有十分重要的意义。 基于我国SOI器件发展现状,以及对SOI器件抗辐射加固技术和总剂量辐照试验方法、评判标准的需求,本论文主要针对国产128Kbit PDSOI CMOS静态随机存储器进行了总剂量辐射效应及辐射损伤机理研究,并对其总剂量辐射损伤评估方法进行了较全面、细致的探索,取得了一些非常有价值和意义的研究成果,例如:在前人基础上优化修改的SRAM参数测试系统可以完成对SOI SRAM读写功能、静态和动态读写功耗电流、数据端输出高低电平、传输延迟以及输出波形的测试,为深入研究SRAM总剂量辐射效应和损伤机理提供了测试和实验方法支持;通过分析PDSOI SRAM各参数随总剂量及室温和高温退火时间的变化关系,并结合CMOS电路和SOI工艺MOS管的总剂量损伤机理,初步揭示了大规模SOI器件总剂量电离辐射损伤机理;对比分析了SOI SRAM各参数对总剂量的敏感程度,确定了试验样品的总剂量辐射损伤敏感参数;还分析研究了SRAM器件电学参数退化与功能失效的相关性,确定样品功能失效的预警量;同时探讨了SRAM在不同偏置条件下的辐射损伤情况,发现静态和动态偏置条件对其总剂量辐照损伤的影响不同,其中动态偏置条件对器件的辐射损伤影响较大;较全面、细致研究了商用SRAM器件在多达6种偏置条件下的总剂量辐射效应和损伤机理,为器件总剂量试验方法的建立奠定了基础。 本项目研究为大规模SOI集成电路抗总剂量辐射损伤的加固提供了可能的方法和途径,并为初步建立大规模SOI器件辐射损伤评估方法提供了实验依据和基础。
其他摘要Because of the special material structure, the technology of partial depletion silicon on insulator (PD SOI) effectively overcomes the disadvantage of the bulk silicon, and has excellent resistance to single event effect and transient radiation. So it is used in the electronic devices of space. In particular, the memory that is easy to produce single event upset in the space, has urgent demand for the SOI technology. However, due to the buried oxide layer in SOI structure, the SOI devices are very sensitive to total dose radiation damage,Thus which greatly restricts the SOI devices from being widely used in the aerospace field. Therefore, improving the ability of anti-radiation on the SOI devices, and development of the assurance methods of the reliability of SOI devices in space radiation environment, have great significance to promote a wide range application of the SOI devices in space and the development of china's aerospace industry. Based on the development level of china's SOI devices, as well as the demand for the radiation hardening technology of the SOI devices, and the test methods of total dose radiation and the evaluation criteria, this paper mainly researches the total dose radiation effects and mechanism of radiation damage on the domestic 128Kbits PDSOI CMOS static random access memory. Meanwhile, it explores more fully and carefully the assessment method of total dose radiation damage, and gets some very valuable and significant research results. For example, on the basis of previous experiments,the optimized and modified testing system of SRAM parameters can complete the SRAM parameters test,including the SOI SRAM read and write function, static and dynamic read-write consumption current, data ports output high- or low-level voltage, transmission delay and output waveform. This provides support for testing and experimental methods to study further the total dose radiation effects and damage mechanism of the SRAM. By analyzing the variation of the PDSOI SRAM parameters with the total dose and annealing time at room and high temperature, and combining with the total dose damage mechanism of the CMOS circuits and SOI MOS transistors, the damage mechanism of total dose ionizing radiation on the large-scale SOI devices is revealed initially. Comparing and analyzing the total dose sensitivity of each parameter on the SOI SRAM, the total dose radiation damage sensitive parameter of the test samples is determined. Also analyzing the correlation between the electrical parameters degradation of the SRAM device and the failure of function, the early-warning of the sample’s failure has been identified. The radiation damage under different bias conditions is also discussed, and the results show that static and dynamic bias conditions have different effects on the radiation damage of total dose, and dynamic bias conditions have a greater impact of radiation damage on the device. By discussing more fully and carefully the total dose radiation effects and damage mechanism of the commercial SRAM devices under up to 6 bias conditions, this has laid the foundation for the establishment of the total dose test methods on the devices. The project provides possible ways and means for the total dose anti-radiation damage reinforcement of the large-scale SOI integrated circuits, and provides an experimental basis and foundation for initially establishing the assessment methods of radiation damage on the large-scale SOI devices.
文献类型学位论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4424
专题材料物理与化学研究室
作者单位中国科学院新疆理化技术研究所
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李明. SOI CMOS静态随机存储器总剂量辐射效应及评估技术的研究[D]. 北京. 中国科学院研究生院,2011.
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