XJIPC OpenIR  > 材料物理与化学研究室
CCD器件辐射损伤参数测试方法
葛钊; 陈佳杰; 李豫东; 吾勤之
2015
Source Publication上海航天
ISSN1006-1630
Volume32Issue:2Pages:64-68
Abstract为准确而高效实现CCD辐射损伤参数的定量测试与分析,根据现有的光电成像器件辐射效应测试系统,研究了CCD器件的辐射损伤参数测试方法,可测试暗信号、电荷转移效率、饱和输出电压、固定图像噪声、光响应非均匀性和光谱响应等参数。用此法获得了某CCD器件在60 Co-γ射线源辐照下的参数变化规律。结果表明:该测试方法利于CCD辐射损伤的分析,可为CCD的辐射效应研究和抗辐射性能评估提供试验数据。
Keyword辐射效应 参数测试方法 光谱响应
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4275
Collection材料物理与化学研究室
Affiliation上海航天技术研究院;中国科学院新疆理化技术研究所;上海航天基础技术研究所
Recommended Citation
GB/T 7714
葛钊,陈佳杰,李豫东,等. CCD器件辐射损伤参数测试方法[J]. 上海航天,2015,32(2):64-68.
APA 葛钊,陈佳杰,李豫东,&吾勤之.(2015).CCD器件辐射损伤参数测试方法.上海航天,32(2),64-68.
MLA 葛钊,et al."CCD器件辐射损伤参数测试方法".上海航天 32.2(2015):64-68.
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