XJIPC OpenIR  > 材料物理与化学研究室
InGaAs量子阱光电材料的辐射损伤效应研究
王海娇
学位类型硕士
导师李豫东 ; 艾尔肯·阿不都瓦衣提
2015-05-29
学位授予单位中国科学院大学
学位授予地点北京
学位专业辐射物理
关键词Ingaas/inp 量子阱 电子辐照 质子辐照 γ 辐照 辐射损伤 光致发
摘要

InGaAs 量子阱光电材料具有暗电流小、载流子寿命长、量子效率高等独特优势,在空间红外光电领域具有良好的应用前景。由于InGaAs 材料具有优异的光学特性和电学特性,因此被广泛应用于电子器件、光电子器件以及短波红外探测器领域。随着空间技术的快速发展,基于InGaAs 量子阱材料的红外探测器及激光器已开始应用于航天工程。然而,空间辐射环境易诱发光电器件性能退化甚至失效,而量子阱结构的量子限制效应等材料特性也必然带来辐射效应新问题。因此,迫切需要研究InGaAs 量子阱光电材料的辐射损伤效应,为光电器件的研发与空间应用提供支撑。近几年来, InGaAs 量子阱光电材料的辐射损伤效应是国际上的研究热点,研究较多涉及基于量子阱结构的探测器、激光器和太阳电池在电子、质子和重粒子辐照下的损伤效应。国内对InGaAs 量子阱光电材料和器件的辐射损伤效应研究还处于探索阶段。本论文将InGaAs/InP 量子阱的测试技术和半导体辐射物理理论相结合,研究材料的辐射损伤效应与机理。对InGaAs/InP 量子阱结构进行了电子、γ、质子等不同辐射源的辐照实验。进行了能量为1MeV 和1.8MeV 的电子辐照实验,在室温下测量光致发光谱,得出量子阱的光致发光特性与辐照注量的关系,并对1MeV 下的电子辐照实验进行了室温退火,获得了电子辐照下InGaAs/InP 量子阱光学特性的辐射损伤退化规律,分析了辐射对材料的载流子动态特性和诱发缺陷的影响。对InGaAs/InP 量子阱样品进行了γ 辐照实验,选取了不同的辐照总剂量点,在室温下对光致发光谱进行了测试,获光致发光强度随辐照剂量的变化关系。对InGaAs/InP 量子阱样品进行了能量为10MeV 和3MeV 的质子辐照实验,室温下测试样品的光致发光谱,获得样品在不同辐照注量下的光致发光强度的变化趋势。同时,对比了不同能量的质子辐照条件下,样品的光致发光强度的变化,获得InGaAs/InP 量子阱结构光学特性的辐射损伤退化规律,分析了辐射对材料发光特性的影响,对辐射效应机理进行分析。综上所述,本论文对InGaAs/InP 量子阱结构开展了不同射线辐照实验,获得了不同射线下的光学特性辐射效应规律,确定了材料对不同射线辐照的敏感性,分析了辐射对材料内部载流子的运动和产生缺陷的影响,为研究InGaAs/InP 量子阱光电材料和器件的辐射效应提供理论支撑。

其他摘要
InGaAs quantum well materials have many unique advantages in terms of low dark current, long life of photo-induced carriers and high quantum efficiency which makes promising prospects in spatial infrared photoelectric devices. InGaAs material have been widely used in electronics, optoelectronic devices and short wave infrared detector due to its excellent optical and electrical properties. Along with the rapid development of aerospace science and technology, the infrared quantum well imagers and quantum well lasers which are based on the InGaAs quantum well materials are already applied in aerospace engineering. Under the influence of space radiation environment, the performances of optoelectronic devices would be degraded or even failed. In addition, some new properties of InGaAs quantum well materials (such as quantum confinement effects of quantum well structures) can inevitably brought new problems of radiation damage effects. Therefore, it is imperative to study the radiation damage effects of InGaAs/InP quantum well materials, in order to provide support for the development of new optoelectronic devices and new space technologies. In recent years, radiation damage effects of InGaAs/InP quantum well optoelectronic materials and devices have been studied intensively. Lots of research works are focused on the radiation damage effects of quantum detectors, quantum well lasers and quantum solar cells. The main research approaches are irradiation experiments with different irradiation sources in terms of electrons, protons and heavy particles. Referring to the domestic research results, the study on radiation damage effects of InGaAs/InP quantum well optoelectronic materials and devices is still on its early stage. The purpose of this thesis is investigating the radiation damage effects and mechanisms of InGaAs/InP quantum well materials based on experimental and theoretical methods of quantum well optoelectronic materials and semiconductor radiation physics. Irradiation experiments on InGaAs/InP quantum well structures were carried out with electron accelerator, gamma source and proton accelerator. 1MeV and 1.8MeV electron beam have been applied in electron irradiation experiment. The photoluminescence (PL) spectra of the quantum well structure were measured before and after the irradiation with different fluences and dosages in order to study and analyze the effects of irradiation induced damages. Room temperature annealing after irradiation has been applied in order to study the dynamic characteristics of carriers. The gamma irradiation experiments were carried out with the Co-60 irradiation source with different irradiation doses. In proton irradiation experiments, we select two proton energies: 3MeV and 10MeV. By PL measurement, the relationship between PL intensity and irradiation doses of gamma and proton was obtained and analyzed. In summary, the irradiation effects on optical properties of InGaAs/InP quantum well and bulk structure have been studied by using different irradiation sources, such as, electron, gamma-ray, and proton, with different fluences and dosages. By comparing the photoluminescence spectra of samples before and after the irradiation, the radiation induced defects and the properties of photo-induced carriers in the quantum well structures were studied. The results of this research work can provide theoretical and experimental supports in future studies of same kind of research fields
文献类型学位论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4252
专题材料物理与化学研究室
作者单位中国科学院新疆理化技术研究所
推荐引用方式
GB/T 7714
王海娇. InGaAs量子阱光电材料的辐射损伤效应研究[D]. 北京. 中国科学院大学,2015.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
InGaAs量子阱光电材料的辐射损伤效应(1658KB)学位论文 开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[王海娇]的文章
百度学术
百度学术中相似的文章
[王海娇]的文章
必应学术
必应学术中相似的文章
[王海娇]的文章
相关权益政策
暂无数据
收藏/分享
文件名: InGaAs量子阱光电材料的辐射损伤效应研究.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。