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题名: Total ionizing dose effects and annealing behavior for domestic VDMOS devices
作者: Gao, Bo; Yu, Xuefeng; Ren, Diyuan; Liu, Gang; Wang, Yiyuan; Sun, Jing; Cui, Jiangwei
通讯作者: Yu, X
刊名: Journal of Semiconductors
发表日期: 2010
DOI: 10.1088/1674-4926/31/4/044007
卷: 31, 期:4
收录类别: EI
摘要: Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown voltage, leakage current, and on-state resistance upon total dose were discussed. We also observed the relationships between these parameters and annealing time. The experiment results show that: the threshold voltage negatively shifts with the increasing of total dose and continues to decrease at the beginning of 100 °C annealing; the breakdown voltage under the drain bias voltage has passed through the pre-irradiation threshold voltage during annealing behaving with a "rebound" effect; there is a latent interface-trap buildup (LITB) phenomenon in the VDMOS devices; the leakage current is suppressed; and on-state resistance is almost kept constant during irradiation and annealing. Our experiment results are meaningful and important for further improvements in the design and processing.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4175
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Gao, Bo,Yu, Xuefeng,Ren, Diyuan,et al. Total ionizing dose effects and annealing behavior for domestic VDMOS devices[J]. Journal of Semiconductors,2010,31(4).
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