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题名: Annealing behavior of radiation damage in JFET-input operational amplifiers
作者: Zheng, Yuzhan; Lu, Wu; Ren, Diyuan; Wang, Yiyuan; Guo, Qi; Yu, Xuefeng
通讯作者: Lu, W.
关键词: JFET-input operational amplifiers ; dose rate ; radiation damage ; annealing behavior
刊名: Journal of Semiconductors
发表日期: 2009
DOI: 10.1088/1674-4926/30/5/055001
卷: 30, 期:5, 页:60-64
收录类别: EI
摘要: The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4174
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Zheng, Yuzhan,Lu, Wu,Ren, Diyuan,et al. Annealing behavior of radiation damage in JFET-input operational amplifiers[J]. Journal of Semiconductors,2009,30(5):60-64.
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