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Annealing behavior of radiation damage in JFET-input operational amplifiers
Zheng, Yuzhan; Lu, Wu; Ren, Diyuan; Wang, Yiyuan; Guo, Qi; Yu, Xuefeng
2009
发表期刊Journal of Semiconductors
ISSN16744926
卷号30期号:5页码:60-64
摘要

The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.

关键词Jfet-input Operational Amplifiers Dose Rate Radiation Damage Annealing Behavior
DOI10.1088/1674-4926/30/5/055001
收录类别EI
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/4174
专题材料物理与化学研究室
通讯作者Lu, Wu
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式
GB/T 7714
Zheng, Yuzhan,Lu, Wu,Ren, Diyuan,et al. Annealing behavior of radiation damage in JFET-input operational amplifiers[J]. Journal of Semiconductors,2009,30(5):60-64.
APA Zheng, Yuzhan,Lu, Wu,Ren, Diyuan,Wang, Yiyuan,Guo, Qi,&Yu, Xuefeng.(2009).Annealing behavior of radiation damage in JFET-input operational amplifiers.Journal of Semiconductors,30(5),60-64.
MLA Zheng, Yuzhan,et al."Annealing behavior of radiation damage in JFET-input operational amplifiers".Journal of Semiconductors 30.5(2009):60-64.
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