XJIPC OpenIR  > 材料物理与化学研究室
Annealing behavior of radiation damage in JFET-input operational amplifiers
Zheng, Yuzhan; Lu, Wu; Ren, Diyuan; Wang, Yiyuan; Guo, Qi; Yu, Xuefeng
2009
Source PublicationJournal of Semiconductors
ISSN16744926
Volume30Issue:5Pages:60-64
Abstract

The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.

KeywordJfet-input Operational Amplifiers Dose Rate Radiation Damage Annealing Behavior
DOI10.1088/1674-4926/30/5/055001
Indexed ByEI
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4174
Collection材料物理与化学研究室
Corresponding AuthorLu, Wu
AffiliationXinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China
Recommended Citation
GB/T 7714
Zheng, Yuzhan,Lu, Wu,Ren, Diyuan,et al. Annealing behavior of radiation damage in JFET-input operational amplifiers[J]. Journal of Semiconductors,2009,30(5):60-64.
APA Zheng, Yuzhan,Lu, Wu,Ren, Diyuan,Wang, Yiyuan,Guo, Qi,&Yu, Xuefeng.(2009).Annealing behavior of radiation damage in JFET-input operational amplifiers.Journal of Semiconductors,30(5),60-64.
MLA Zheng, Yuzhan,et al."Annealing behavior of radiation damage in JFET-input operational amplifiers".Journal of Semiconductors 30.5(2009):60-64.
Files in This Item:
File Name/Size DocType Version Access License
Annealing behavior o(147KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zheng, Yuzhan]'s Articles
[Lu, Wu]'s Articles
[Ren, Diyuan]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zheng, Yuzhan]'s Articles
[Lu, Wu]'s Articles
[Ren, Diyuan]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zheng, Yuzhan]'s Articles
[Lu, Wu]'s Articles
[Ren, Diyuan]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Annealing behavior of radiation damage in JFET-input operational amplifiers.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.