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题名: Dose-rate dependence of optically stimulated luminescence signal
作者: Pingqiang, Wei; Zhaoyang, Chen; Yanwei, Fan; Yurun, Sun; Yun, Zhao
通讯作者: Zhaoyang, C
刊名: Journal of Semiconductors
发表日期: 2010
DOI: 10.1088/1674-4926/31/10/102001
卷: 31, 期:10
收录类别: EI
摘要: Optically stimulated luminescence (OSL) is the luminescence emitted from a semiconductor during its exposure to light. The OSL intensity is a function of the total dose absorbed by the sample. The dose-rate dependence of the OSL signal of the semiconductor CaS doped Ce and Sm was studied by numerical simulation and experiments. Based on a one-trap/one-center model, the whole OSL process was represented by a series of differential equations. The dose-rate properties of the materials were acquired theoretically by solving the equations. Good coherence was achieved between numerical simulation and experiments, both of which showed that the OSL signal was independent of dose rate. This result validates that when using OSL as a dosimetry technique, the dose-rate effect can be neglected.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/4173
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Pingqiang, Wei,Zhaoyang, Chen,Yanwei, Fan,et al. Dose-rate dependence of optically stimulated luminescence signal[J]. Journal of Semiconductors,2010,31(10).
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