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NTC and electrical properties of nickel and gold doped n-type silicon material
Dong, Maojin; Chen, Zhaoyang; Fan, Yanwei; Wang, Junhua; Tao, Mingde; Cong, Xiuyun
2009
Source PublicationJournal of Semiconductors
ISSN16744926
Volume30Issue:8Pages:52-55
AbstractSilicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient (NTC) characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and subsequently put in the opening environment to heat. The electrical resistance and B-value of the thermistors made by this silicon material are measured and analyzed. When the silicon surface concentration of gold atoms is 2 × 10-6 mol/cm2, the uniformity of the single-crystal silicon material is optimal. When the diffusion temperature is between 900 and 1000 °C, a material with high B-value and low electrical resistivity is obtained. The B-T and R-T change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results.
KeywordDeep Level Impurities Nickel Gold Ntc Electrical Properties
DOI10.1088/1674-4926/30/8/083007
Indexed ByEI
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Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/4171
Collection材料物理与化学研究室
AffiliationXinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China
Recommended Citation
GB/T 7714
Dong, Maojin,Chen, Zhaoyang,Fan, Yanwei,et al. NTC and electrical properties of nickel and gold doped n-type silicon material[J]. Journal of Semiconductors,2009,30(8):52-55.
APA Dong, Maojin,Chen, Zhaoyang,Fan, Yanwei,Wang, Junhua,Tao, Mingde,&Cong, Xiuyun.(2009).NTC and electrical properties of nickel and gold doped n-type silicon material.Journal of Semiconductors,30(8),52-55.
MLA Dong, Maojin,et al."NTC and electrical properties of nickel and gold doped n-type silicon material".Journal of Semiconductors 30.8(2009):52-55.
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