Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient (NTC) characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and subsequently put in the opening environment to heat. The electrical resistance and B-value of the thermistors made by this silicon material are measured and analyzed. When the silicon surface concentration of gold atoms is 2 × 10-6 mol/cm2, the uniformity of the single-crystal silicon material is optimal. When the diffusion temperature is between 900 and 1000 °C, a material with high B-value and low electrical resistivity is obtained. The B-T and R-T change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results.