| NTC and electrical properties of nickel and gold doped n-type silicon material | |
| Dong, Maojin; Chen, Zhaoyang; Fan, Yanwei; Wang, Junhua; Tao, Mingde; Cong, Xiuyun | |
| 2009 | |
| 发表期刊 | Journal of Semiconductors
 |
| ISSN | 16744926 |
| 卷号 | 30期号:8页码:52-55 |
| 摘要 | Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient (NTC) characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and subsequently put in the opening environment to heat. The electrical resistance and B-value of the thermistors made by this silicon material are measured and analyzed. When the silicon surface concentration of gold atoms is 2 × 10-6 mol/cm2, the uniformity of the single-crystal silicon material is optimal. When the diffusion temperature is between 900 and 1000 °C, a material with high B-value and low electrical resistivity is obtained. The B-T and R-T change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results. |
| 关键词 | Deep Level Impurities Nickel Gold Ntc Electrical Properties |
| DOI | 10.1088/1674-4926/30/8/083007 |
| 收录类别 | EI |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.xjipc.cas.cn/handle/365002/4171 |
| 专题 | 材料物理与化学研究室 |
| 作者单位 | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate University, Chinese Academy of Sciences, Beijing 100049, China |
| 推荐引用方式 GB/T 7714 | Dong, Maojin,Chen, Zhaoyang,Fan, Yanwei,et al. NTC and electrical properties of nickel and gold doped n-type silicon material[J]. Journal of Semiconductors,2009,30(8):52-55. |
| APA | Dong, Maojin,Chen, Zhaoyang,Fan, Yanwei,Wang, Junhua,Tao, Mingde,&Cong, Xiuyun.(2009).NTC and electrical properties of nickel and gold doped n-type silicon material.Journal of Semiconductors,30(8),52-55. |
| MLA | Dong, Maojin,et al."NTC and electrical properties of nickel and gold doped n-type silicon material".Journal of Semiconductors 30.8(2009):52-55. |
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