The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.
Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China; National Key Laboratory of Analog Integrated Circuits, Chongqing 400060, China
Yuzhan, Zheng,Wu, Lu,Diyuan, Ren,et al. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors[J]. Journal of Semiconductors,2010,31(3).